BT139B-600G,118 NXP Semiconductors, BT139B-600G,118 Datasheet - Page 2

• Manufacturer Part Number: BT139B-600G,118
• Description: TRIAC 600V 16A SOT404
• Manufacturer: NXP Semiconductors

Specifications of BT139B-600G,118

• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Triac Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 60mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 155A, 170A
• Current - On State (it (rms)) (max): 16A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 16A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 170 A
• On-state Rms Current (it Rms): 16 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.7 V
• Gate Trigger Current (igt): 22 mA
• Holding Current (ih Max): 60 mA
• Forward Voltage Drop: 1.2 V
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934048050118; BT139B-600G /T3; BT139B-600G /T3

Philips Semiconductors
3. Ordering information
Table 2:
4. Limiting values
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
9397 750 13359
Product data sheet
Type number
BT139B-600
BT139B-600F
BT139B-600G
BT139B-800
BT139B-800F
BT139B-800G
Symbol
V
I
I
I
dI
I
V
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
GM
G(AV)
T
/d
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/ s.
t
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current full sine wave;
I
repetitive rate of rise of on-state
current after triggering
peak gate current
peak gate voltage
peak gate power
average gate power
storage temperature
2
junction temperature
t for fusing
BT139B-600
BT139B-800
Package
Name
-
Description
plastic single-ended surface mounted package (Philips version of
D
2
-PAK); 3 leads (one lead cropped)
Rev. 04.00 — 9 July 2004
Conditions
full sinewave;
T
and
T
surge;
Figure 3
t = 10 ms
I
dI
over any 20 ms period
TM
mb
j
G
= 25 C prior to
t = 20 ms
t = 16.7 ms
T2+ G+
T2+ G
T2 G
T2 G+
/dt = 0.2 A/ s
= 20 A; I
Figure 5
99 C;
Figure 2
G
Figure 4
= 0.2 A;
and
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
40
BT139B series
© Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Max
600
800
16
155
170
120
50
50
50
10
2
5
5
0.5
+150
125
Version
SOT404
Unit
V
V
A
A
A
A
A/ s
A/ s
A/ s
A/ s
A
V
W
W
C
C
2
s
Triacs
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