BTA312X-600E,127 NXP Semiconductors, BTA312X-600E,127 Datasheet - Page 4

• Manufacturer Part Number: BTA312X-600E,127
• Description: TRIAC 600V 12A TO-220F
• Manufacturer: NXP Semiconductors

Specifications of BTA312X-600E,127

• Package / Case: TO-220-3 Full Pack
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 95A, 105A
• Current - On State (it (rms) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Triac Type: Logic - Sensitive Gate
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 105 A
• On-state Rms Current (it Rms): 12 A
• Off-state Leakage Current @ Vdrm Idrm: 0.1 mA
• Gate Trigger Voltage (vgt): 0.4 V
• Gate Trigger Current (igt): 10 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.3 V
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934060044127::BTA312X-600E::BTA312X-600E

NXP Semiconductors
BTA312X_SER_D_E_1
Product data sheet
Fig 3. Non-repetitive peak on-state current as a function of pulse duration; maximum values
Fig 4. RMS on-state current as a function of surge
I
T(RMS)
(A)
(1) dI
I
TSM
(A)
10
10
10
80
70
60
50
40
30
20
10
3
2
0
10
t
10
f = 50 Hz
T
duration; maximum values
p
h
T
-5
-2
/dt limit
= 61 C
20 ms
10
(1)
-1
10
-4
1
surge duration (s)
003aab681
10
Rev. 01 — 16 April 2007
10
-3
Fig 5. RMS on-state current as a function of heatsink
BTA312X series D and E
I
T(RMS)
(A)
12 A Three-quadrant triacs high commutation
15
10
5
0
temperature; maximum values
-50
0
10
-2
50
I
T
T
j(init)
= 25 C max
t
p
100
t
p
© NXP B.V. 2007. All rights reserved.
(s)
003aab691
003aab679
T
I
h
TSM
( C)
t
10
150
-1
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