BTA312B-800C,118 NXP Semiconductors, BTA312B-800C,118 Datasheet - Page 2

• Manufacturer Part Number: BTA312B-800C,118
• Description: TRIAC 800V 12A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BTA312B-800C,118

• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 35mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 95A, 105A
• Current - On State (it (rms) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Triac Type: Standard
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Breakover Current Ibo Max: 105 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 35 mA
• Holding Current (ih Max): 35 mA
• Forward Voltage Drop: 1.6 V @ 15 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934060048118::BTA312B-800C /T3::BTA312B-800C /T3

NXP Semiconductors
3. Ordering information
Table 2.
4. Limiting values
Table 3.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
BTA312B_SER_B_C_1
Product data sheet
Type number
BTA312B-600B
BTA312B-600C
BTA312B-800B
BTA312B-800C
Symbol
V
I
I
I
dI
I
P
P
T
T
T(RMS)
TSM
2
GM
stg
j
DRM
t
GM
G(AV)
T
/dt
Although not recommended, off-state voltages up to 800 V may be applied without damage, but the triac may switch to the on-state. The
rate of rise of current should not exceed 15 A/ s.
Ordering information
Limiting values
Parameter
repetitive peak off-state voltage
RMS on-state current
non-repetitive peak on-state current
I
rate of rise of on-state current
peak gate current
peak gate power
average gate power
storage temperature
junction temperature
2
t for fusing
Package
Name
D2PAK
Description
plastic single-ended surface-mounted package (D2PAK); 3-leads (one lead
cropped)
Rev. 01 — 12 April 2007
Conditions
BTA312B-600B; BTA312B-600C
BTA312B-800B; BTA312B-800C
full sine wave; T
Figure 4
full sine wave; T
surge; see
t = 10 ms
I
dI
over any 20 ms period
TM
G
t = 20 ms
t = 16.7 ms
/dt = 0.2 A/ s
= 20 A; I
and
Figure 2
G
BTA312B series B and C
5
= 0.2 A;
mb
j
= 25 C prior to
12 A Three-quadrant triacs high commutation
and
101 C; see
3
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
40
© NXP B.V. 2007. All rights reserved.
Max
600
800
12
95
105
45
100
2
5
0.5
+150
125
Version
SOT404
Unit
V
V
A
A
A
A
A/ s
A
W
W
C
C
2
s
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