BT136S-800F,118 NXP Semiconductors, BT136S-800F,118 Datasheet - Page 2
![TRIAC 800V 4A SOT428](/photos/5/32/53207/dpak_sml.jpg)
BT136S-800F,118
Manufacturer Part Number
BT136S-800F,118
Description
TRIAC 800V 4A SOT428
Manufacturer
NXP Semiconductors
Datasheet
1.BT136S-600118.pdf
(6 pages)
Specifications of BT136S-800F,118
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Triac Type
Standard
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
25mA
Current - Non Rep. Surge 50, 60hz (itsm)
25A, 27A
Current - On State (it (rms)) (max)
4A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
4A
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
27 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
70 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.7 V @ 5 A
Mounting Style
SMD/SMT
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934049030118
BT136S-800F /T3
BT136S-800F /T3
BT136S-800F /T3
BT136S-800F /T3
Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
June 2001
Triacs
SYMBOL PARAMETER
R
R
j
SYMBOL PARAMETER
I
I
I
V
V
I
j
SYMBOL PARAMETER
dV
dV
t
GT
L
H
D
gt
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
T
GT
th j-mb
th j-a
D
com
/dt
/dt
Thermal resistance
junction to mounting base half cycle
Thermal resistance
junction to ambient
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating voltage
Gate controlled turn-on
time
CONDITIONS
full cycle
pcb (FR4) mounted; footprint as in Fig.14
CONDITIONS
V
V
V
I
V
V
T
V
T
CONDITIONS
BT136S (or BT136M)-
V
T
waveform; gate open
circuit
V
I
dI
open circuit
I
I
T
T(RMS)
TM
G
j
j
j
D
D
D
D
D
D
DM
DM
com
= 5 A
= 125 ˚C
= 125 ˚C
= 125 ˚C; exponential
= 0.1 A; dI
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 6 A; V
= 67% V
= 400 V; T
/dt = 1.8 A/ms; gate
= 4 A;
DRM(max)
D
T
GT
GT
T
G
T
DRM(max)
= V
= 0.1 A
= 0.1 A
;
/dt = 5 A/ s
= 0.1 A
= 0.1 A
= 0.1 A;
j
BT136S-
= 95 ˚C;
T2+ G+
T2+ G-
T2- G-
T2- G+
T2+ G+
T2+ G-
T2- G-
T2- G+
2
DRM(max)
;
;
MIN.
0.25
-
-
-
-
-
-
-
-
-
-
-
-
100
...
-
-
TYP.
MIN.
1.4
0.7
0.4
0.1
11
30
16
5
8
7
5
7
5
...F
50
MIN.
-
-
-
-
-
35
35
35
70
20
30
20
30
15
...
MAX.
TYP.
TYP.
1.70
250
1.5
0.5
75
50
BT136S series
2
-
-
-
Product specification
...F
25
25
25
70
20
30
20
30
15
MAX.
MAX.
3.0
3.7
-
-
-
-
Rev 1.300
UNIT
UNIT
UNIT
V/ s
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
s