BTA204X-600C,127 NXP Semiconductors, BTA204X-600C,127 Datasheet - Page 2
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BTA204X-600C,127
Manufacturer Part Number
BTA204X-600C,127
Description
TRIAC 600V 4A TO-220F
Manufacturer
NXP Semiconductors
Datasheet
1.BTA204X-600C127.pdf
(6 pages)
Specifications of BTA204X-600C,127
Package / Case
TO-220-3 Full Pack
Triac Type
Standard
Mounting Type
Through Hole
Configuration
Single
Current - Hold (ih) (max)
20mA
Voltage - Off State
600V
Current - Gate Trigger (igt) (max)
35mA
Current - Non Rep. Surge 50, 60hz (itsm)
25A, 27A
Current - On State (it (rms)) (max)
4A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
4A
Rated Repetitive Off-state Voltage Vdrm
600 V
Breakover Current Ibo Max
27 A
On-state Rms Current (it Rms)
4 A
Off-state Leakage Current @ Vdrm Idrm
0.1 mA
Gate Trigger Voltage (vgt)
0.4 V
Gate Trigger Current (igt)
35 mA
Holding Current (ih Max)
20 mA
Forward Voltage Drop
1.4 V
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 125 C
Minimum Operating Temperature
- 40 C
Off-state Capacitance Co
10 pF
Repetitive Peak Forward Blocking Voltage
600 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
568-3704
934055303127
BTA204X-600C
934055303127
BTA204X-600C
Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Device does not trigger in the T2-, G+ quadrant.
December 1998
Three quadrant triacs
high commutation
hs
SYMBOL
V
C
SYMBOL PARAMETER
R
R
j
j
SYMBOL PARAMETER
dV
dI
t
SYMBOL
I
I
I
V
V
I
gt
GT
L
H
D
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
isol
isol
th j-hs
th j-a
T
GT
com
= 25 ˚C unless otherwise specified
D
/dt
/dt
Thermal resistance
junction to heatsink
Thermal resistance
junction to ambient
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Gate controlled turn-on
time
PARAMETER
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
2
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
CONDITIONS
V
exponential waveform; gate open circuit
V
dV
I
dI
TM
DM
DM
G
com
CONDITIONS
V
V
V
I
V
V
T
V
/dt = 5 A/ s
= 12 A; V
T
= 67% V
= 400 V; T
j
D
T2+ G+
T2+ G-
T2- G-
D
T2+ G+
T2+ G-
T2- G-
D
D
D
D
= 5 A
= 125 ˚C
/dt = 20V/ s; gate open circuit
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
CONDITIONS
waveform;
R.H.
DRM(max)
D
DRM(max)
65% ; clean and dustfree
= V
T
GT
GT
T
j
= 125 ˚C; I
T
2
= 0.1 A
= 0.1 A
; T
= 0.1 A
= 0.1 A
= 0.1 A;
DRM(max)
BTA204X-
j
; T
= 125 ˚C
j
= 125 ˚C;
; I
G
T(RMS)
= 0.1 A;
BTA204X-
= 4 A;
MIN.
0.25
-
-
-
-
-
-
-
-
-
-
BTA204X series B and C
TYP.
1.4
0.7
0.4
0.1
1000
MIN.
MIN.
-
-
-
-
-
-
-
...B
-
-
6
-
-
-
-
MIN.
...B
TYP.
50
50
50
30
45
30
30
TYP.
1000
10
...C
55
3
-
-
-
Product specification
MAX.
1.7
1.5
0.5
-
MAX.
2500
MAX.
...C
TYP.
35
35
35
20
30
20
20
5.5
7.2
-
2
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
UNIT
A/ms
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
pF
V
V
V
V
s