BT136B-800E,118 NXP Semiconductors, BT136B-800E,118 Datasheet - Page 3
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BT136B-800E,118
Manufacturer Part Number
BT136B-800E,118
Description
TRIAC 800V 4A SOT404
Manufacturer
NXP Semiconductors
Datasheet
1.BT136B-600E118.pdf
(6 pages)
Specifications of BT136B-800E,118
Package / Case
TO-263-3, D²Pak (2 leads + Tab), TO-263AB
Triac Type
Logic - Sensitive Gate
Mounting Type
Surface Mount
Configuration
Single
Current - Hold (ih) (max)
15mA
Voltage - Off State
800V
Current - Gate Trigger (igt) (max)
10mA
Current - Non Rep. Surge 50, 60hz (itsm)
25A, 27A
Current - On State (it (rms)) (max)
4A
Voltage - Gate Trigger (vgt) (max)
1.5V
Current - On State (it (rms) (max)
4A
Rated Repetitive Off-state Voltage Vdrm
800 V
Breakover Current Ibo Max
27 A
Off-state Leakage Current @ Vdrm Idrm
0.5 mA
Gate Trigger Voltage (vgt)
1.5 V
Gate Trigger Current (igt)
25 mA
Holding Current (ih Max)
15 mA
Forward Voltage Drop
1.7 V @ 5 A
Mounting Style
SMD/SMT
Repetitive Peak Forward Blocking Voltage
800 V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934047620118
BT136B-800E /T3
BT136B-800E /T3
BT136B-800E /T3
BT136B-800E /T3
Philips Semiconductors
June 2001
Triacs
sensitive gate
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
8
7
6
5
4
3
2
1
0
on-state current I
1000
0
30
25
20
15
10
Ptot / W
100
5
0
10
1
10us
ITSM / A
ITSM / A
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
1
T2- G+ quadrant
100us
dI /dt limit
1
T(RMS)
T
TSM
Number of cycles at 50Hz
10
TSM
2
, versus number of cycles, for
IT(RMS) / A
, where
, versus pulse width t
BT136
1ms
T / s
I
3
I
T
T
Tj initial = 25 C max
Tj initial = 25 C max
p
100
= conduction angle.
T
T
10ms
20ms.
Tmb(max) / C
4
120
tot
90
60
30
I TSM
I TSM
, versus rms
= 180
time
time
100ms
p
, for
1000
5
101
104
107
110
113
116
119
122
125
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
Fig.4. Maximum permissible rms current I
5
4
3
2
1
0
-50
GT
1.6
1.4
1.2
0.8
0.6
0.4
IT(RMS) / A
12
10
8
6
4
2
0
0.01
(T
1
-50
IT(RMS) / A
VGT(25 C)
versus mounting base temperature T
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
T(RMS)
currents, f = 50 Hz; T
GT
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
0.1
surge duration / s
Tmb / C
Tj / C
50
50
BT136B series E
mb
Product specification
1
107˚C.
100
100
107 C
mb
Rev 1.300
T(RMS)
.
150
10
150
,
j
.