BTA212B-600D,118 NXP Semiconductors, BTA212B-600D,118 Datasheet - Page 2

• Manufacturer Part Number: BTA212B-600D,118
• Description: TRIAC 600V 12A D2PAK
• Manufacturer: NXP Semiconductors

Specifications of BTA212B-600D,118

• Package / Case: TO-263-3, D²Pak (2 leads + Tab), TO-263AB
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 5mA
• Current - Non Rep. Surge 50, 60hz (itsm): 95A, 105A
• Current - On State (it (rms)) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 12A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 105 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 5 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.6 V @ 17 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 568-3726-2; 934055320118; BTA212B-600D /T3

Philips Semiconductors
THERMAL RESISTANCES
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Device does not trigger in the T2-, G+ quadrant.
October 2003
Three quadrant triacs
guaranteed commutation
SYMBOL PARAMETER
R
R
j
j
SYMBOL
I
I
I
V
V
I
SYMBOL
dV
dI
dI
GT
L
H
D
= 25 ˚C unless otherwise stated
= 25 ˚C unless otherwise stated
th j-mb
th j-a
T
GT
com
com
D
/dt
/dt
/dt
Thermal resistance
junction to mounting base half cycle
Thermal resistance
junction to ambient
PARAMETER
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
Off-state leakage current
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Critical rate of change of
commutating current
2
CONDITIONS
full cycle
in free air
CONDITIONS
V
V
V
I
V
V
T
V
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dV
open circuit
V
I
dV
open circuit
T
T(RMS)
T(RMS)
j
j
D
T2+ G+
T2+ G-
T2- G-
D
T2+ G+
T2+ G-
T2- G-
D
D
D
D
DM
DM
DM
= 17 A
= 125 ˚C
= 110 ˚C; exponential
com
com
= 12 V; I
= 12 V; I
= 12 V; I
= 12 V; I
= 400 V; I
= V
= 67% V
= 400 V; T
= 400 V; T
/dt = 10V/ s; gate
/dt = 0.1V/ s; gate
= 12 A;
= 12 A;
DRM(max)
T
GT
GT
T
T
DRM(max)
2
= 0.1 A
= 0.1 A
; T
= 0.1 A
= 0.1 A
BTA212B-
= 0.1 A;
BTA212B-
j
j
j
= 125 ˚C;
= 125 ˚C;
= 125 ˚C
;
...D
MIN.
0.25
...D
1.0
3.5
20
BTA212B series D, E and F
-
-
-
-
-
-
-
-
-
MIN.
...D
...E
15
25
25
15
60
16
5
5
5
8
MIN.
-
-
-
...D, E, F
MAX.
...E
1.6
1.5
0.5
...F
10
10
10
25
30
30
25
70
21
32
TYP.
-
55
-
-
Product specification
MAX.
MAX.
...F
25
25
25
30
40
40
30
1.5
2.0
-
-
-
-
Rev 3.000
UNIT
UNIT
A/ms
A/ms
UNIT
V/ s
K/W
K/W
K/W
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V