BTB12-800BW3G ON Semiconductor, BTB12-800BW3G Datasheet - Page 5

• Manufacturer Part Number: BTB12-800BW3G
• Description: TRIAC 12A 50MA 800V TO-220AB
• Manufacturer: ON Semiconductor
• Type: TRIACr

Specifications of BTB12-800BW3G

• Triac Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 50mA
• Voltage - Off State: 800V
• Current - Gate Trigger (igt) (max): 50mA
• Current - Non Rep. Surge 50, 60hz (itsm): 120A @ 60Hz
• Current - On State (it (rms)) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.1V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 12A
• Repetitive Peak Off-state Volt: 800V
• Off-state Voltage: 800V
• Hold Current: 50mA
• Gate Trigger Current (max): 50mA
• Gate Trigger Voltage (max): 1.7V
• Package Type: TO-220AB
• Peak Repeat Off Current: 5uA
• Peak Surge On-state Current (max): 120A
• On State Voltage(max): 1.55@17AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Rated Repetitive Off-state Voltage Vdrm: 800 V
• Off-state Leakage Current @ Vdrm Idrm: 0.005 mA
• Gate Trigger Voltage (vgt): 1.7 V
• Gate Trigger Current (igt): 50 mA
• Holding Current (ih Max): 50 mA
• Forward Voltage Drop: 1.55 V
• Mounting Style: Through Hole
• Repetitive Peak Forward Blocking Voltage: 800 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BTB12-800BW3G; BTB12-800BW3GOS

1000
100
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
Fig. 4:
values).
Fig. 6: Non-repetitive surge peak on-state
current for a sinusoidal pulse with width
tp < 10ms, and corresponding value of I²t.
Fig. 8-1: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (BW/CW/T1235).
100
10
10
0.1
1
0.5
0.01
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
ITM (A)
B
ITSM (A), I²t (A²s)
C
dI/dt limitation:
SW
Tj max
1.0
50A/µs
On-state characteristics (maximum
1.5
Tj=25°C
1.0
0.10
2.0
(dV/dt)c (V/µs)
2.5
tp (ms)
VTM(V)
3.0
10.0
1.00
3.5
4.0
Vto = 0.85 V
Rd = 35 m
Tj initial=25°C
BW/CW/T1235
Tj max.
ITSM
I²t
4.5
100.0
10.00
5.0
2.5
2.0
1.5
1.0
0.5
0.0
130
120
110
100
Fig. 5: Surge peak on-state current versus
number of cycles.
Fig. 7: Relative variation of gate trigger current,
holding current and latching current versus
junction temperature (typical values).
Fig. 8-2: Relative variation of critical rate of
decrease of main current versus (dV/dt)c (typical
values) (TW).
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
90
80
70
60
50
40
30
20
10
0
-40
0.1
1
IGT,IH,IL[Tj] / IGT,IH,IL [Tj=25°C]
(dI/dt)c [(dV/dt)c] / Specified (dI/dt)c
ITSM (A)
IH & IL
-20
IGT
Repetitive
Tc=90°C
0
1.0
BTA/BTB12 and T12 Series
20
10
Tj initial=25°C
Non repetitive
Number of cycles
(dV/dt)c (V/µs)
TW
40
Tj(°C)
60
10.0
100
80
100
t=20ms
One cycle
120
100.0
1000
140
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