BT137S-600E,118 NXP Semiconductors, BT137S-600E,118 Datasheet - Page 3

• Manufacturer Part Number: BT137S-600E,118
• Description: TRIAC 600V 8A TO220AB
• Manufacturer: NXP Semiconductors
• Type: TRIACr

Specifications of BT137S-600E,118

• Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
• Triac Type: Logic - Sensitive Gate
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 20mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 10mA
• Current - Non Rep. Surge 50, 60hz (itsm): 65A, 71A
• Current - On State (it (rms)) (max): 8A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 8A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 71 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 20 mA
• Forward Voltage Drop: 1.65 V @ 10 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 600 V
• Repetitive Peak Off-state Volt: 600V
• Off-state Voltage: 600V
• Hold Current: 20mA
• Gate Trigger Current (max): 25mA
• Gate Trigger Voltage (max): 1.5V
• Package Type: DPAK
• Peak Repeat Off Current: 500uA
• Peak Surge On-state Current (max): 71A
• On State Voltage(max): 1.65@10AV
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3661-2; 934049430118; BT137S-600E /T3

Philips Semiconductors
June 2001
Triacs
sensitive gate
Fig.1. Maximum on-state dissipation, P
on-state current, I
on-state current I
Fig.2. Maximum permissible non-repetitive peak
Fig.3. Maximum permissible non-repetitive peak
12
10
1000
80
70
60
50
40
30
20
10
on-state current I
8
6
4
2
0
100
0
0
10
1
1
Ptot / W
ITSM / A
10us
ITSM / A
sinusoidal currents, t
sinusoidal currents, f = 50 Hz.
2
T2- G+ quadrant
100us
dI /dt limit
1
T(RMS)
Number of cycles at 50Hz
TSM
10
T
TSM
, versus number of cycles, for
4
IT(RMS) / A
, where
, versus pulse width t
1ms
T / s
I
6
T
Tj initial = 25 C max
I
T
p
100
Tj initial = 25 C max
= conduction angle.
20ms.
10ms
T
Tmb(max) / C
8
tot
120
90
60
30
, versus rms
= 180
I TSM
time
I TSM
time
p
100ms
, for
1000
10
101
105
109
113
117
121
125
3
Fig.5. Maximum permissible repetitive rms on-state
current I
V
10
Fig.4. Maximum permissible rms current I
GT
8
6
4
2
0
-50
1.6
1.4
1.2
0.8
0.6
0.4
25
20
15
10
IT(RMS) / A
5
0
0.01
(T
1
-50
IT(RMS) / A
VGT(25 C)
versus mounting base temperature T
j
Fig.6. Normalised gate trigger voltage
)/ V
VGT(Tj)
T(RMS)
currents, f = 50 Hz; T
GT
(25˚C), versus junction temperature T
, versus surge duration, for sinusoidal
0
0
0.1
surge duration / s
BT137
Tj / C
Tmb / C
50
50
BT137S series E
mb
Product specification
1
102˚C.
100
100
102 C
mb
Rev 1.400
T(RMS)
.
150
10
150
,
j
.