BTA216X-600F,127 NXP Semiconductors, BTA216X-600F,127 Datasheet - Page 3

• Manufacturer Part Number: BTA216X-600F,127
• Description: TRIAC 600V 16A TO-220F
• Manufacturer: NXP Semiconductors

Specifications of BTA216X-600F,127

• Package / Case: TO-220-3 Full Pack
• Triac Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 30mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 25mA
• Current - Non Rep. Surge 50, 60hz (itsm): 140A, 150A
• Current - On State (it (rms)) (max): 16A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 16A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 150 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 25 mA
• Holding Current (ih Max): 30 mA
• Forward Voltage Drop: 1.5 V @ 20 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 600 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-3743-5; 934056011127; BTA216X-600F

Philips Semiconductors
DYNAMIC CHARACTERISTICS
T
April 2002
Three quadrant triacs
guaranteed commutation
j
SYMBOL
dV
dI
dI
= 25 ˚C unless otherwise stated
com
com
D
/dt
/dt
/dt
PARAMETER
Critical rate of rise of
off-state voltage
Critical rate of change of
commutating current
Critical rate of change of
commutating current
CONDITIONS
V
T
waveform; gate open
circuit
V
I
dV
open circuit
V
I
dV
open circuit
T(RMS)
T(RMS)
DM
j
DM
DM
= 110 ˚C; exponential
com
com
= 67% V
= 400 V; T
= 400 V; T
/dt = 10V/ s; gate
/dt = 0.1V/ s; gate
= 16 A;
= 16 A;
DRM(max)
3
BTA216X-
j
j
= 125 ˚C;
= 125 ˚C;
;
...D
2.5
30
12
BTA216X series D, E and F
MIN.
...E
6.2
60
20
...F
70
18
50
Product specification
MAX.
-
-
-
Rev 2.000
UNIT
A/ms
A/ms
V/ s