MAC12DG ON Semiconductor, MAC12DG Datasheet - Page 2

• Manufacturer Part Number: MAC12DG
• Description: THYRISTOR TRIAC 12A 400V TO220AB
• Manufacturer: ON Semiconductor
• Type: TRIACr

Specifications of MAC12DG

• Triac Type: Standard
• Mounting Type: Through Hole
• Configuration: Single
• Current - Hold (ih) (max): 40mA
• Voltage - Off State: 400V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 100A @ 60Hz
• Current - On State (it (rms)) (max): 12A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Package / Case: TO-220-3
• Current - On State (it (rms) (max): 12A
• Repetitive Peak Off-state Volt: 400V
• Off-state Voltage: 400V
• Hold Current: 40mA
• Gate Trigger Current (max): 35mA
• Gate Trigger Voltage (max): 1.5V
• Package Type: TO-220AB
• Peak Repeat Off Current: 10uA
• Peak Surge On-state Current (max): 100A
• On State Voltage(max): 1.85@17AV
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MAC12DGOS

2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
Thermal Resistance,
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Peak On−State Voltage (Note 2) (I
Gate Trigger Current (Continuous dc) (V
Hold Current (V
Latch Current (V
Gate Trigger Voltage (Continuous dc) (V
Rate of Change of Commutating Current
Critical Rate of Rise of Off−State Voltage
Repetitive Critical Rate of Rise of On-State Current
Peak Repetitive Blocking Current
(V
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
(V
T
(V
IPK = 50 A; PW = 40 msec; diG/dt = 200 mA/msec; f = 60 Hz
J
D
D
D
= 125°C, f = 250 Hz, No Snubber)
= Rated V
= 400 V, ITM = 4.4A, Commutating dv/dt = 18 V/ms, Gate Open,
= Rated V
D
DRM
D
DRM
= 12 V, Gate Open, Initiating Current = "150 mA)
= 24 V, I
, V
, Exponential Waveform, Gate Open, T
RRM
G
, Gate Open)
= 35 mA)
Junction−to−Case
Junction−to−Ambient
TM
Characteristic
Characteristic
= "17 A)
(T
D
D
J
= 12 V, R
= 12 V, R
= 25°C unless otherwise noted; Electricals apply in both directions)
MAC12D, MAC12M, MAC12N
L
L
= 100 W)
= 100 W)
http://onsemi.com
J
= 125°C)
2
T
T
J
J
= 25°C
= 125°C
Symbol
Symbol
(di/dt)c
I
R
R
I
dv/dt
DRM
V
V
di/dt
RRM
I
T
GT
I
qJC
qJA
I
TM
GT
H
L
L
,
Min
250
5.0
5.0
5.0
0.5
0.5
0.5
6.5
−
−
−
−
−
−
−
−
Value
62.5
0.78
0.70
0.71
Typ
260
500
2.2
13
13
13
20
20
30
20
−
−
−
−
−
Max
0.01
1.85
2.0
1.5
1.5
1.5
35
35
35
40
50
80
50
10
−
−
°C/W
A/ms
V/ms
A/ms
Unit
Unit
mA
mA
mA
mA
°C
V
V