BT134W-600,135 NXP Semiconductors, BT134W-600,135 Datasheet - Page 4

• Manufacturer Part Number: BT134W-600,135
• Description: TRIAC 600V 1A 35MA SOT223
• Manufacturer: NXP Semiconductors
• Type: TRIACr

Specifications of BT134W-600,135

• Package / Case: TO-261-4, TO-261AA
• Triac Type: Standard
• Mounting Type: Surface Mount
• Configuration: Single
• Current - Hold (ih) (max): 15mA
• Voltage - Off State: 600V
• Current - Gate Trigger (igt) (max): 35mA
• Current - Non Rep. Surge 50, 60hz (itsm): 10A, 11A
• Current - On State (it (rms)) (max): 1A
• Voltage - Gate Trigger (vgt) (max): 1.5V
• Current - On State (it (rms) (max): 1A
• Rated Repetitive Off-state Voltage Vdrm: 600 V
• Breakover Current Ibo Max: 11 A
• Off-state Leakage Current @ Vdrm Idrm: 0.5 mA
• Gate Trigger Voltage (vgt): 1.5 V
• Gate Trigger Current (igt): 70 mA
• Holding Current (ih Max): 15 mA
• Forward Voltage Drop: 1.5 V @ 2 A
• Mounting Style: SMD/SMT
• Repetitive Peak Forward Blocking Voltage: 600 V
• Repetitive Peak Off-state Volt: 600V
• Off-state Voltage: 600V
• Hold Current: 15mA
• Gate Trigger Current (max): 70mA
• Gate Trigger Voltage (max): 1.5V
• Package Type: SOT-223
• Peak Repeat Off Current: 500uA
• Peak Surge On-state Current (max): 11A
• On State Voltage(max): 1.5@2AV
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Operating Temp Range: -40C to 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-1774-2; 934000960135; BT134W-600 /T3

Philips Semiconductors
September 1997
Triacs
Fig.8. Normalised latching current I
Fig.9. Normalised holding current I
2.5
1.5
0.5
2.5
1.5
0.5
I
GT
3
2
1
0
2.5
1.5
0.5
3
2
1
0
-50
-50
(T
3
2
1
0
IGT(25 C)
IL(25 C)
-50
IGT(Tj)
IL(Tj)
IH(25C)
IH(Tj)
Fig.7. Normalised gate trigger current
j
)/ I
GT
versus junction temperature T
versus junction temperature T
(25˚C), versus junction temperature T
0
0
0
BT136
TRIAC
TRIAC
Tj / C
Tj / C
Tj / C
50
50
50
100
T2+ G-
T2- G-
100
100
T2+ G+
T2- G+
H
L
(T
(T
j
j
)/ I
)/ I
j
j
.
.
H
L
(25˚C),
(25˚C),
150
150
150
j
.
4
Fig.10. Typical and maximum on-state characteristic.
temperature, parameter commutation dI
should commutate when the dV/dt is below the value
on the appropriate curve for pre-commutation dI
Fig.11. Transient thermal impedance Z
Fig.12. Typical commutation dV/dt versus junction
1000
100
1.5
0.5
0.01
10
100
2
1
0
0.1
1
10
0
1
10us
0
IT / A
dVcom/dt (V/us)
Tj = 125 C
Tj = 25 C
Vo = 1.0 V
Rs = 0.21 Ohms
Zth j-sp (K/W)
dIcom/dt = 5.1
0.1ms
0.5
A/ms
pulse width t
1ms
unidirectional
50
3.9
BT134W
typ
tp / s
Tj / C
VT / V
10ms
BT134W
3
1
P
D
2.3
bidirectional
BT134W series
p
0.1s
.
100
Product specification
1.8
t
p
max
off-state dV/dt limit
1.5
BT134...G SERIES
BT134...F SERIES
1.4
BT134 SERIES
T
1s
th j-sp
/dt. The triac
t
, versus
Rev 1.200
10s
150
2
T
/dt.