EMF6T2R Rohm Semiconductor, EMF6T2R Datasheet - Page 4

• Manufacturer Part Number: EMF6T2R
• Description: TRANS PNP BIP+MOS EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMF6T2R

• Transistor Type: PNP, N-Channel
• Applications: General Purpose
• Voltage - Rated: 12V PNP, 30V N Channel
• Current Rating: 500mA PNP, 100mA N Channel
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Transistors
Tr2
Fig.15 Static drain-source on-state
0.15
0.05
Fig.12 Static drain-source on-state
0.1
Fig.9 Typical output characteristics
0
0.5
0
50
20
10
0.001
9
8
7
6
5
4
3
2
1
0
5
2
1
−50
resistance vs. channel temperature
DRAIN-SOURCE VOLTAGE : V
0.002
CHANNEL TEMPERATURE : Tch (°C)
−25
resistance vs. drain current ( Ι )
1
Ta=125°C
4V
3.5V
DRAIN CURRENT : I
0.005 0.01 0.02
I
−25°C
0
D
75°C
25°C
=100mA
2
V
25
GS
2.5V
2V
=1.5V
3V
50
3
0.05 0.1
75
I
D
=50mA
D
100 125
4
(A)
Ta=25°C
Pulsed
DS
V
Pulsed
V
Pulsed
(V)
GS
0.2
GS
=4V
=4V
5
150
0.5
Fig.10 Typical transfer characteristics
Fig.13 Static drain-source on-state
200m
100m
Fig.16 Forward transfer admittance vs.
0.5m
0.2m
0.1m
50m
20m
10m
5m
2m
1m
0.5
50
20
10
0.001
0.005
0.002
0.001
5
2
1
0
0.05
0.02
0.01
0.5
0.2
0.1
V
Pulsed
0.0001
DS
GATE-SOURCE VOLTAGE : V
0.002
resistance vs. drain current ( ΙΙ )
=3V
drain current
0.0002 0.0005 0.001 0.002
Ta=125°C
Ta=−25°C
DRAIN CURRENT : I
0.005 0.01 0.02
1
−25°C
75°C
25°C
DRAIN CURRENT : I
125°C
25°C
75°C
2
Ta=125°C
0.005 0.01 0.02
−25°C
0.05 0.1
75°C
25°C
D
3
(A)
D
GS
V
Pulsed
0.05
(A)
GS
0.2
(V)
=2.5V
0.1 0.2
V
Pulsed
DS
=3V
4
0.5
0.5
200m
100m
0.5m
0.2m
0.1m
50m
20m
10m
1.5
0.5
Fig.14 Static drain-source on-state
5m
2m
1m
15
10
2
1
0
−50
5
0
0
0
Fig.17 Reverse drain current vs.
Fig.11 Gate threshold voltage vs.
CHANNEL TEMPERATURE : Tch (°C)
SOURCE-DRAIN VOLTAGE : V
−25
GATE-SOURCE VOLTAGE : V
resistance vs. gate-source
voltage
source-drain voltage ( Ι )
channel temperature
0
5
0.5
25
Rev.A
10
50
I
I
D
D
Ta=125°C
=0.1A
=0.05A
75
1
−25°C
75°C
25°C
100 125 150
15
EMF6
V
I
Pulsed
D
DS
Ta=25°C
Pulsed
GS
V
Pulsed
SD
=0.1mA
GS
4/5
=3V
(V)
(V)
=0V
1.5
20