MUN5215T1 ON Semiconductor, MUN5215T1 Datasheet - Page 8

• Manufacturer Part Number: MUN5215T1
• Description: TRANS BRT NPN 100MA 50V SOT-323
• Manufacturer: ON Semiconductor

Specifications of MUN5215T1

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 202mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

0.01
0.8
0.6
0.4
0.2
0.1
10
1
0
1
0
0
I
C
/I
B
= 10
10
Figure 14. Output Capacitance
Figure 12. V
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS - - MUN5213T1G
20
20
CE(sat)
100
0.1
10
1
T
A
0
Figure 16. Input Voltage versus Output Current
30
= --25C
versus I
V
O
= 0.2 V
10
C
40
f = 1 MHz
I
T
E
40
A
= 0 V
I
= 25C
C
, COLLECTOR CURRENT (mA)
http://onsemi.com
75C
25C
20
50
50
8
T
0.001
1000
A
30
0.01
100
100
= --25C
0.1
10
10
1
1
0
Figure 15. Output Current versus Input Voltage
40
75C
25C
75C
2
Figure 13. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
V
in
50
, INPUT VOLTAGE (VOLTS)
25C
4
10
T
A
= --25C
6
V
O
= 5 V
T
A
V
8
= 75C
CE
= 10 V
25C
--25C
100
10