MUN5131T1 ON Semiconductor, MUN5131T1 Datasheet

MUN5131T1

Manufacturer Part Number

MUN5131T1

Description

TRANS BRT PNP 100MA 50V SOT-363

Manufacturer

ON Semiconductor

Datasheet

1.MUN5112T1G.pdf (13 pages)

Specifications of MUN5131T1

Transistor Type

PNP - Pre-Biased

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V

Resistor - Base (r1) (ohms)

2.2K

Resistor - Emitter Base (r2) (ohms)

2.2K

Dc Current Gain (hfe) (min) @ Ic, Vce

8 @ 5mA, 10V

Vce Saturation (max) @ Ib, Ic

250mV @ 5mA, 10mA

Current - Collector Cutoff (max)

500nA

Power - Max

202mW

Mounting Type

Surface Mount

Package / Case

SC-70, SOT-323

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

MUN5131T1G

Manufacturer:

Quantity:

30 000

Current page: 1 of 13
Download datasheet (142Kb)

MUN5111T1 Series

Bias Resistor Transistors

PNP Silicon Surface Mount Transistor

with Monolithic Bias Resistor Network

device and its external resistor bias network. The Bias Resistor

Transistor (BRT) contains a single transistor with a monolithic bias

network consisting of two resistors; a series base resistor and a

base−emitter resistor. The BRT eliminates these individual

components by integrating them into a single device. The use of a BRT

can reduce both system cost and board space. The device is housed in

the SC−70/SOT−323 package which is designed for low power

surface mount applications.

Features

•

1. FR−4 @ Minimum Pad

2. FR−4 @ 1.0 x 1.0 inch Pad

MAXIMUM RATINGS

October, 2010 − Rev. 10

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

THERMAL CHARACTERISTICS

Collector-Base Voltage

Collector-Emitter Voltage

Collector Current

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction-to-Ambient

Thermal Resistance, Junction-to-Lead

Junction and Storage Temperature

This new series of digital transistors is designed to replace a single

The modified gull−winged leads absorb thermal stress during

soldering eliminating the possibility of damage to the die.

to order the 7 inch/3000 unit reel. Replace “T1” with “T3” in the

Device Number to order the 13 inch/10,000 unit reel.

Compliant

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

The SC−70/SOT−323 package can be soldered using wave or reflow.

Available in 8 mm embossed tape and reel − Use the Device Number

These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Range

= 25°C

Characteristic

Rating

= 25°C unless otherwise noted)

Symbol

, T

CBO

CEO

qJA

qJL

stg

202 (Note 1)

310 (Note 2)

1.6 (Note 1)

2.5 (Note 2)

618 (Note 1)

403 (Note 2)

280 (Note 1)

332 (Note 2)

−55 to +150

Value

Max

100

mAdc

°C/W

Unit

Vdc

°C

See specific ordering and shipping information in the package

dimensions section on page 2 of this data sheet.

(INPUT)

*Date Code orientation may vary depending

(Note: Microdot may be in either location)

upon manufacturing location.

BASE

PIN 1

ORDERING INFORMATION

BIAS RESISTOR

MARKING DIAGRAM

TRANSISTORS

http://onsemi.com

PNP SILICON

SC−70/SOT−323

= Device Code

= Date Code*

= Pb−Free Package

CASE 419

STYLE 3

6x M G

Publication Order Number:

PIN 2

EMITTER

(GROUND)

PIN 3

COLLECTOR

(OUTPUT)

MUN5111T1/D

Related parts for MUN5131T1

MUN5131T1 Summary of contents

Page 1

MUN5111T1 Series Bias Resistor Transistors PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains ...

Page 2

... MUN5115T1G (Note 3) SC−70/SOT−323 (Pb−Free) MUN5116T1G (Note 3) SC−70/SOT−323 (Pb−Free) MUN5130T1G (Note 3) SC−70/SOT−323 (Pb−Free) MUN5131T1G (Note 3) SC−70/SOT−323 (Pb−Free) MUN5132T1G (Note 3) SC−70/SOT−323 (Pb−Free) MUN5133T1G (Note 3) SC−70/SOT−323 (Pb−Free) MUN5134T1G (Note 3) SC−70/SOT−323 (Pb− ...

Page 3

... MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 = 0.3 mA CE(sat) MUN5130T1/MUN5131T1 MUN5115T1/MUN5116T1 MUN5111T1 MUN5112T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5113T1 MUN5136T1 MUN5137T1 http://onsemi.com 3 Min Typ Max Unit − − 100 nAdc − − 500 nAdc − ...

Page 4

... A Symbol = 1.0 kW MUN5130T1 MUN5115T1 MUN5116T1 MUN5131T1 MUN5132T1 R1 MUN5111T1 MUN5112T1 MUN5113T1 MUN5114T1 MUN5115T1 MUN5116T1 MUN5130T1 MUN5131T1 MUN5132T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5136T1 MUN5137T1 MUN5114T1 MUN5115T1/MUN5116T1 MUN5133T1 MUN5134T1 MUN5135T1 MUN5137T1 R = 833°C/W qJA 0 50 100 T , AMBIENT TEMPERATURE (°C) A Figure 1 ...

Page 5

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5111T1 -25°C A 0.1 75°C 0. COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5112T1 -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5113T1 -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0 ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS − MUN5114T1 0.1 75°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 1 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1 1 0.1 0. COLLECTOR CURRENT (mA) C Figure 23. Maximum Collector Voltage versus Collector Current ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5133T1 0.1 −25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 28. V versus I CE(sat ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5136T1 1 0.1 −25°C 0. COLLECTOR CURRENT (mA) C Figure 33. Maximum Collector Voltage versus Collector Current 1.2 1.0 0.8 0.6 0.4 0 ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS — MUN5137T1 −25°C A 0.1 25°C 0. COLLECTOR CURRENT (mA) C Figure 38. Maximum Collector Voltage versus Collector Current 1.4 1.2 1.0 0.8 0.6 0.4 ...

Page 13

... A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...

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