MUN5113T1 ON Semiconductor, MUN5113T1 Datasheet - Page 9
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MUN5113T1
Manufacturer Part Number
MUN5113T1
Description
TRANS BRT PNP 100MA 50V SOT-363
Manufacturer
ON Semiconductor
Datasheet
1.MUN5112T1G.pdf
(13 pages)
Specifications of MUN5113T1
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
202mW
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MUN5113T1G
Manufacturer:
ON/安森美
Quantity:
20 000
10
0.01
9
8
7
6
5
4
3
2
1
0
0.1
0
1
0
Figure 23. Maximum Collector Voltage versus
V
10
5
R
Figure 25. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
I
C
, COLLECTOR CURRENT (mA)
10
20
Collector Current
TYPICAL ELECTRICAL CHARACTERISTICS — MUN5132T1
15
30
0.1
10
1
0
Figure 27. Input Voltage versus Output Current
−25°C
20
25°C
40
5
75°C
25
10
−25°C
75°C
I
50
C
, OUTPUT CURRENT (mA)
15
http://onsemi.com
30
25°C
20
60
35
9
25
1000
0.01
100
30
100
0.1
10
10
1
1
0
0
Figure 26. Output Current versus Input Voltage
35
75°C
1
40
20
2
Figure 24. DC Current Gain
I
45
C
V
, COLLECTOR CURRENT (mA)
in
25°C
, INPUT VOLTAGE (VOLTS)
3
−25°C
40
50
4
60
5
6
25°C
80
7
−25°C
75°C
8
100
9
120
10