MMUN2113LT3 ON Semiconductor, MMUN2113LT3 Datasheet - Page 4

• Manufacturer Part Number: MMUN2113LT3
• Description: TRANS BRT PNP 50V SOT-23
• Manufacturer: ON Semiconductor

Specifications of MMUN2113LT3

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
Input Resistor
Resistor Ratio
Characteristic
(T
A
= 25°C unless otherwise noted) (Continued)
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G
MMUN2130LT1G
MMUN2131LT1G
MMUN2132LT1G
MMUN2133LT1G
MMUN2134LT1G
MMUN2112LT1G
MMUN2113LT1G
MMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G
MMUN2112LT1G
MMUN2113LT1G
MMUN2114LT1G
MMUN2115LT1G
MMUN2116LT1G
MMUN2111LT1G
MMUN2111LT1G
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4
Symbol
R
R1
1
/R
2
0.055
15.4
32.9
15.4
0.17
0.38
Min
7.0
7.0
7.0
3.3
0.7
1.5
3.3
3.3
0.8
0.8
0.8
0.8
0.8
0.8
−
−
0.21
0.47
Typ
4.7
1.0
2.2
4.7
4.7
1.0
1.0
1.0
1.0
1.0
1.0
0.1
10
22
47
10
10
22
−
−
0.185
Max
28.6
61.1
28.6
0.25
0.56
6.1
1.3
2.9
6.1
6.1
1.2
1.2
1.2
1.2
1.2
1.2
13
13
13
−
−
Unit
k W