DTC123JET1 ON Semiconductor, DTC123JET1 Datasheet - Page 5

• Manufacturer Part Number: DTC123JET1
• Description: TRANS NPN 50V 2.2/47K SC75-3
• Manufacturer: ON Semiconductor

Specifications of DTC123JET1

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

0.001
0.01
0.1
4
2
1
0
3
1
0
0
I
C
/I
B
= 10
10
Figure 5. Output Capacitance
Figure 3. V
V
20
R
I
, REVERSE BIAS VOLTAGE (VOLTS)
C
, COLLECTOR CURRENT (mA)
TYPICAL ELECTRICAL CHARACTERISTICS − DTC114EET1
20
CE(sat)
0.1
10
1
0
versus I
V
Figure 7. Input Voltage versus Output Current
30
O
= 0.2 V
T
A
40
= −25°C
10
C
f = 1 MHz
I
T
E
40
DTC114EET1 Series
75°C
A
I
C
= 0 V
= 25°C
, COLLECTOR CURRENT (mA)
http://onsemi.com
25°C
20
50
T
50
A
= −25°C
5
0.001
1000
75°C
30
0.01
100
100
0.1
10
10
1
1
0
Figure 6. Output Current versus Input Voltage
75°C
1
40
25°C
2
Figure 4. DC Current Gain
25°C
I
T
C
V
A
, COLLECTOR CURRENT (mA)
3
in
= −25°C
, INPUT VOLTAGE (VOLTS)
50
4
10
5
6
7
T
8
V
A
CE
= 75°C
V
O
= 10 V
−25°C
= 5 V
9
25°C
100
10