DTC123EET1 ON Semiconductor, DTC123EET1 Datasheet - Page 4

• Manufacturer Part Number: DTC123EET1
• Description: TRANS NPN 50V 2.2/2.2K SC75-3
• Manufacturer: ON Semiconductor

Specifications of DTC123EET1

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 8 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

ELECTRICAL CHARACTERISTICS
Input Resistor
Resistor Ratio
0.001
0.01
1.0
0.1
0.00001
0.05
0.01
D = 0.5
0.1
0.02
0.2
SINGLE PULSE
TC114EET1
DTC124EET1
DTC144EET1
DTC114YET1
DTC114TET1
DTC143TET1
DTC123EET1
DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC115EET1
DTC144WET1
DTC114EET1/DTC124EET1/DTC144EET1/
DTC115EET1
DTC114YET1
DTC143TET1/DTC114TET1
DTC123EET1/DTC143EET1
DTC143ZET1
DTC124XET1
DTC123JET1
DTC144WET1D
0.0001
Characteristic
250
200
150
100
50
0
−50
0.001
(T
A
Figure 2. Normalized Thermal Response
= 25°C unless otherwise noted) (Continued)
0
T
Figure 1. Derating Curve
DTC114EET1 Series
A
, AMBIENT TEMPERATURE (°C)
0.01
R
http://onsemi.com
qJA
= 600°C/W
t, TIME (s)
50
4
Symbol
0.1
R
R1
1
/R
2
100
1.0
0.055
0.038
15.4
32.9
15.4
1.54
32.9
0.17
0.38
Min
7.0
7.0
7.0
3.3
1.5
3.3
3.3
0.8
0.8
1.7
70
−
150
0.047
0.21
0.47
Typ
100
4.7
2.2
4.7
4.7
2.2
1.0
1.0
0.1
2.1
10
22
47
10
10
22
47
10
−
0.185
0.056
Max
28.6
61.1
28.6
2.86
61.1
0.25
0.56
130
6.1
2.9
6.1
6.1
1.2
1.2
2.6
13
13
13
−
100
Unit
kW
1000