MUN2236T1 ON Semiconductor, MUN2236T1 Datasheet

MUN2236T1

Manufacturer Part Number

MUN2236T1

Description

TRANS BRT NPN 50V SC59

Manufacturer

ON Semiconductor

Datasheet

1.MUN2211T1G.pdf (18 pages)

Specifications of MUN2236T1

Transistor Type

NPN - Pre-Biased

Current - Collector (ic) (max)

100mA

Voltage - Collector Emitter Breakdown (max)

50V

Resistor - Base (r1) (ohms)

100K

Resistor - Emitter Base (r2) (ohms)

100K

Dc Current Gain (hfe) (min) @ Ic, Vce

80 @ 5mA, 10V

Vce Saturation (max) @ Ib, Ic

250mV @ 300µA, 10mA

Current - Collector Cutoff (max)

500nA

Power - Max

338mW

Mounting Type

Surface Mount

Package / Case

SC-59-3, SMT3, SOT-346, TO-236

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Other names

MUN2236T1OS

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MUN2211T1 Series

Bias Resistor Transistors

NPN Silicon Surface Mount Transistors

with Monolithic Bias Resistor Network

device and its external resistor bias network. The BRT (Bias Resistor

Transistor) contains a single transistor with a monolithic bias network

consisting of two resistors; a series base resistor and a base-emitter

resistor. The BRT eliminates these individual components by

integrating them into a single device. The use of a BRT can reduce

both system cost and board space. The device is housed in the

SC-59 package which is designed for low power surface

mount applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR-4 @ Minimum Pad.

2. FR-4 @ 1.0 x 1.0 inch Pad.

MAXIMUM RATINGS

July, 2007 - Rev. 13

THERMAL CHARACTERISTICS

Collector‐Base Voltage

Collector‐Emitter Voltage

Collector Current

Total Device Dissipation

Derate above 25°C

Thermal Resistance, Junction‐to‐Ambient

Thermal Resistance, Junction‐to‐Lead

Junction and Storage Temperature

Range

This new series of digital transistors is designed to replace a single

Soldering Eliminating the Possibility of Damage to the Die

Simplifies Circuit Design

Reduces Board Space

Reduces Component Count

Moisture Sensitivity Level: 1

ESD Rating - Human Body Model: Class 1

The SC-59 Package can be Soldered Using Wave or Reflow

The Modified Gull-Winged Leads Absorb Thermal Stress During

Pb-Free Packages are Available

= 25°C

Characteristic

Rating

- Machine Model: Class B

= 25°C unless otherwise noted)

Preferred Devices

Symbol

, T

CBO

CEO

qJA

qJL

stg

230 (Note 1)

338 (Note 2)

540 (Note 1)

370 (Note 2)

264 (Note 1)

287 (Note 2)

1.8 (Note 1)

2.7 (Note 2)

- 55 to +150

Value

Max

100

mAdc

°C/W

Unit

Vdc

°C

See detailed ordering and shipping information in the table on

page 2 of this data sheet.

See specific marking information in the Device Marking and

Resistor Values table on page 2 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

(INPUT)

*Date Code orientation may vary depending

(Note: Microdot may be in either location)

DEVICE MARKING INFORMATION

BASE

upon manufacturing location.

PIN 2

ORDERING INFORMATION

= Device Code (Refer to page 2)

= Date Code*

= Pb-Free Package

BIAS RESISTOR

MARKING DIAGRAM

TRANSISTORS

http://onsemi.com

NPN SILICON

8x M G

Publication Order Number:

CASE 318D

STYLE 1

SC-59

PIN 1

EMITTER

(GROUND)

PIN 3

COLLECTOR

(OUTPUT)

MUN2211T1/D

Related parts for MUN2236T1

MUN2236T1 Summary of contents

Page 1

MUN2211T1 Series Preferred Devices Bias Resistor Transistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor ...

Page 2

... MUN2232T1 SC-59 MUN2232T1G SC-59 (Pb-Free) MUN2233T1 SC-59 MUN2233T1G SC-59 (Pb-Free) MUN2234T1 (Note 3) SC-59 MUN2234T1G (Note 3) SC-59 (Pb-Free) MUN2236T1 SC-59 MUN2236T1G SC-59 (Pb-Free) MUN2237T1 SC-59 MUN2237T1G SC-59 (Pb-Free) MUN2240T1 (Note 3) SC-59 MUN2240T1G (Note 3) SC-59 (Pb-Free) MUN2241T1 (Note 3) SC-59 MUN2241T1G (Note 3) SC-59 (Pb-Free) † ...

Page 3

... FE MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1 CE(sat) MUN2211T1, G MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2233T1, G MUN2236T1, G MUN2230T1, G MUN2231T1, G MUN2237T1, G MUN2241T1, G MUN2215T1, G MUN2216T1, G MUN2232T1, G MUN2234T1, G MUN2240T1, G http://onsemi.com 3 Min Typ Max Unit - - 100 nAdc - - 500 nAdc ...

Page 4

... R 1 MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G MUN2211T1 MUN2212T1, G MUN2213T1, G MUN2214T1, G MUN2215T1, G MUN2216T1, G MUN2230T1, G MUN2231T1, G MUN2232T1, G MUN2233T1, G MUN2234T1, G MUN2236T1, G MUN2237T1, G MUN2240T1, G MUN2241T1, G http://onsemi.com 4 Min Typ Max Unit Vdc - - 0.2 ...

Page 5

MUN2211T1 Series 350 300 250 200 150 100 R = 370°C/W 50 qJA AMBIENT TEMPERATURE (°C) A Figure 1. Derating Curve http://onsemi.com 5 100 150 ...

Page 6

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2211T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 2. V versus I CE(sat ...

Page 7

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2212T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 7. V versus I CE(sat ...

Page 8

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2213T1 -25° 25°C 1 0.1 0. COLLECTOR CURRENT (mA) C Figure 12. V versus I CE(sat) 1 0.8 0.6 0.4 0.2 ...

Page 9

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2214T1 0.1 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 17. V versus I CE(sat) 4 3.5 3 2.5 2 1 ...

Page 10

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2215T1 0.1 -25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 22. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 11

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2216T1 0.1 -25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 27. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 12

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2230T1 0.1 -25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 32. V versus I CE(sat) 4.5 4 3.5 3 2.5 2 1.5 ...

Page 13

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2232T1 75°C 0.1 -25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 37. V versus I CE(sat ...

Page 14

TYPICAL ELECTRICAL CHARACTERISTICS — MUN2233T1 0.1 -25°C 25°C 0.01 0.001 COLLECTOR CURRENT (mA) C Figure 42. V versus I CE(sat) 4 3.5 3 2.5 2 1.5 1 ...

Page 15

... TYPICAL ELECTRICAL CHARACTERISTICS - MUN2236T1 -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 47. V versus I CE(sat) 5 4.5 4 3.5 3 2.5 2 1 REVERSE BIAS VOLTAGE (VOLTS) R Figure 49. Output Capacitance 100 0.1 0 Figure 51. Input Voltage versus Output Current MUN2211T1 Series 1000 25°C 75°C 100 0.1 C 100 ...

Page 16

TYPICAL ELECTRICAL CHARACTERISTICS - MUN2237T1 -25°C A 0.1 0. COLLECTOR CURRENT (mA) C Figure 52. V versus I CE(sat) 2 1.8 1.6 1.4 ...

Page 17

MUN2211T1 Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V FROM mP OR OTHER LOGIC Figure 57. Level Shifter: Connects Volt Circuits to Logic V CC OUT IN Figure 58. Open Collector Inverter: Inverts the Input Signal Figure ...

Page 18

... A A1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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