MMUN2241LT1 ON Semiconductor, MMUN2241LT1 Datasheet - Page 11

• Manufacturer Part Number: MMUN2241LT1
• Description: TRANS PREBIASED NPN 50V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMUN2241LT1

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 160 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MMUN2241LT1OS

0.001
4.5
3.5
2.5
1.5
0.5
0.01
4
3
2
1
0
0.1
0
1
0
I
5
C
/I
B
V
R
= 10
10
Figure 39. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
C
Figure 37. V
15
, COLLECTOR CURRENT (mA)
−25°C
TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2231LT1G
20
20
25
0.1
CE(sat)
10
1
0
25°C
Figure 41. Input Voltage versus Output Current
30
30
versus I
T
35
A
75°C
75°C
= −25°C
10
f = 1 MHz
I
T
I
E
C
A
40
, COLLECTOR CURRENT (mA)
= 0 V
C
= 25°C
40
http://onsemi.com
45
25°C
20
50
50
11
0.001
0.01
100
30
100
0.1
10
10
1
1
0
1
Figure 40. Output Current versus Input Voltage
75°C
V
O
1
T
A
= 0.2 V
40
= −25°C
T
A
2
75°C
= −25°C
Figure 38. DC Current Gain
I
V
C
, COLLECTOR CURRENT (mA)
in
25°C
, INPUT VOLTAGE (VOLTS)
3
50
4
5
10
25°C
6
7
V
O
V
8
= 5 V
CE
= 10 V
9
100
10