MUN2212T1 ON Semiconductor, MUN2212T1 Datasheet - Page 16

• Manufacturer Part Number: MUN2212T1
• Description: TRANS BRT NPN 100MA 50V SC59
• Manufacturer: ON Semiconductor

Specifications of MUN2212T1

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 22K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 60 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 338mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: MUN2212T1OSCT

0.01
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
0.1
2
1
0
1
0
0
I
C
/I
B
5
5
= 10
V
R
Figure 54. Output Capacitance
, REVERSE BIAS VOLTAGE (VOLTS)
10
I
Figure 52. V
C
10
, COLLECTOR CURRENT (mA)
15
15
TYPICAL ELECTRICAL CHARACTERISTICS - MUN2237T1
20
CE(sat)
100
20
10
1
T
25
A
0
Figure 56. Input Voltage versus Output Current
= -25°C
V
versus I
25
O
= 0.2 V
30
5
75°C
30
25°C
f = 1 MHz
l
T
E
I
C
35
A
C
10
= 0 V
, COLLECTOR CURRENT (mA)
MUN2211T1 Series
= 25°C
25°C
http://onsemi.com
35
40
15
45
40
16
20
T
0.001
1000
A
0.01
100
100
0.1
= -25°C
10
10
1
25
1
0
1
Figure 55. Output Current versus Input Voltage
V
CE
30
2
= 10 V
75°C
I
35
C
Figure 53. DC Current Gain
V
, COLLECTOR CURRENT (mA)
4
in
, INPUT VOLTAGE (VOLTS)
75°C
40
6
10
8
25°C
10
T
A
= -25°C
12
V
T
A
O
= -25°C
= 5 V
14
75°C
25°C
100
16