JANTX2N3767 MICROSEMI, JANTX2N3767 Datasheet
JANTX2N3767
Manufacturer Part Number
JANTX2N3767
Description
Trans GP BJT NPN 80V 4A 3-Pin (2+Tab) TO-66
Manufacturer
MICROSEMI
Type
NPNr
Datasheet
1.JANTX2N3767.pdf
(3 pages)
Specifications of JANTX2N3767
Package
3TO-66
Supplier Package
TO-66
Pin Count
3
Minimum Dc Current Gain
30@50mA@5V|40@500mA@5V|20@1A@10V
Maximum Dc Collector Current
4 A
Maximum Collector Emitter Saturation Voltage
2.5@0.1A@1A|1@0.05A@0.5A V
Maximum Collector Base Voltage
100 V
Maximum Collector Emitter Voltage
80 V
Maximum Emitter Base Voltage
6 V
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/518
Devices
2N3766
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
1) Derate linearly 143 mW/
ELECTRICAL CHARACTERISTICS (T
OFF CHARACTERISTICS
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
Operating & Storage Temperature Range
Thermal Resistance, Junction-to-Case
Collector-Emitter Breakdown Voltage
Collector-Emitter Cutoff Current
Collector-Emitter Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
I
V
V
V
V
V
V
V
C
CE
CE
CE
CE
CB
CB
EB
= 100 mAdc
= 60 Vdc
= 80 Vdc
= 80 Vdc, V
= 100 Vdc, V
= 80 Vdc
= 100 Vdc
= 6.0 Vdc
Characteristics
BE
Ratings
BE
= 1.5 Vdc
= 1.5 Vdc
0
C between T
Characteristics
@ T
C
= +25
C
0
= +25
C
(1)
C
0
2N3767
C and T
2N3766
2N3767
2N3766
2N3767
2N3766
2N3767
2N3766
2N3767
= 25
Symbol
T
Symbol
V
V
V
op
R
P
CEO
CBO
EBO
I
I
,
0
B
C
T
T
JC
C unless otherwise noted)
C
stg
= +200
2N3766
0
C
60
80
-65 to +200
Max.
6.0
2.0
4.0
7.0
25
2N3767
V
Symbol
100
80
(BR)
I
I
I
I
CBO
CEO
CEX
EBO
CEO
TECHNICAL DATA
Units
0
Unit
Vdc
Vdc
Vdc
Adc
Adc
C/W
W
0
C
Min.
60
80
*See Appendix A for
Package Outline
Qualified Level
Max.
500
500
500
10
10
10
10
(TO-213AA)
JANTXV
JANTX
TO-66*
JAN
Page 1 of 2
Unit
Vdc
120101
Adc
Adc
Adc
Adc
Related parts for JANTX2N3767
Image
Part Number
Description
Manufacturer
Datasheet
Request
R
Part Number:
Description:
MICROSEMI DIODE
Manufacturer:
MICROSEMI
Datasheet:
Part Number:
Description:
Schottky Rectifier
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Schottky Rectifier
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Schottky Rectifier
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Schottky Rectifier
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Ultra Fast Rectifier (less than 100ns)
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Ultra Fast Rectifier (less than 100ns)
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Ultra Fast Rectifier (less than 100ns)
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
Part Number:
Description:
Manufacturer:
Microsemi Corporation
Datasheet:
JANTX2N3767 Summary of contents
Page 1
NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/518 Devices 2N3766 MAXIMUM RATINGS Ratings Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation @ T = +25 C Operating & Storage Temperature Range THERMAL CHARACTERISTICS Characteristics Thermal Resistance, ...
Page 2
ELECTRICAL CHARACTERISTICS (con’t) Characteristics (2) ON CHARACTERISTICS Forward-Current Transfer Ratio mAdc 5.0 Vdc 500 mAdc 5.0 Vdc 1.0 Adc Vdc C CE ...
Page 3
...