NSB9435T1G ON Semiconductor, NSB9435T1G Datasheet - Page 4

• Manufacturer Part Number: NSB9435T1G
• Description: TRANS BRT PNP 30V BIP SOT223-4
• Manufacturer: ON Semiconductor

Specifications of NSB9435T1G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 30V
• Resistor - Base (r1) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 125 @ 800mA, 1V
• Vce Saturation (max) @ Ib, Ic: 550mV @ 300mA, 3A
• Frequency - Transition: 110MHz
• Power - Max: 720mW
• Mounting Type: Surface Mount
• Package / Case: TO-261-4, TO-261AA, SOT-223-4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1000
4.0
3.0
2.0
1.0
0.0001
100
0.001
10
0
0.01
1
1.0
0.1
25
0.1
T
T
A
C
0.0001
f = 1 MHz
T
0.05
0.02
0.01
D = 0.5
A
0.2
0.1
= 25°C
50
SINGLE PULSE
Figure 7. Output Capacitance
V
Figure 9. Power Derating
R
T, TEMPERATURE (°C)
, REVERSE VOLTAGE (V)
0.001
1
75
100
0.01
10
Figure 10. Thermal Response
125
http://onsemi.com
t, TIME (seconds)
150
0.1
100
4
0.001
0.01
a transistor: average junction temperature and secondary
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Secondary breakdown
pulse limits are valid for duty cycles to 10% provided T
v 150_C. T
Figure 10. At high case temperatures, thermal limitations
will reduce the power that can be handled to values less than
the limitations imposed by secondary breakdown.
1.0
0.1
10
There are two limitations on the power handling ability of
The data of Figure 8 is based on T
R
q
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
0.1
J(pk)
qJA
JA
Figure 8. Active Region Safe Operating Area
= 174°C/W
1.0
(t) = r(t) q
V
- T
CE
A
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
= P
J(pk)
(pk)
JA
1
q
5.0 ms
JA
BONDING WIRE LIMIT
THERMAL LIMIT (Single Pulse)
SECONDARY BREAKDOWN LIMIT
may be calculated from the data in
(t)
1.0
10
P
(pk)
100 ms
DUTY CYCLE, D = t
0.5 ms
J(pk)
10
t
1
100
t
2
= 150_C; T
C
1
/t
− V
2
1000
100
J(pk)
C
CE
is