MUN5111T1G ON Semiconductor, MUN5111T1G Datasheet - Page 4

• Manufacturer Part Number: MUN5111T1G
• Description: TRANS BRT PNP 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5111T1G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 35 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 202mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Transistor Polarity: PNP
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 35
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SC-70
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MUN5111T1G; MUN5111T1GOSTR

ELECTRICAL CHARACTERISTICS
Output Voltage (off) (V
Input Resistor
Resistor Ratio
(V
(V
CC
CC
= 5.0 V, V
= 5.0 V, V
MUN5111T1/MUN5112T1/MUN5113T1/MUN5136T1
B
B
CC
= 0.050 V, R
= 0.25 V, R
= 5.0 V, V
Characteristic
MUN5130T1/MUN5131T1/MUN5132T1
L
250
200
150
100
L
= 1.0 kW)
B
50
= 1.0 kW)
0
= 0.5 V, R
- 50
(T
A
MUN5115T1/MUN5116T1
= 25°C unless otherwise noted) (Continued)
L
= 1.0 kW)
0
T
Figure 1. Derating Curve
A
, AMBIENT TEMPERATURE (°C)
R
http://onsemi.com
qJA
MUN5130T1
MUN5131T1
MUN5132T1
MUN5130T1
MUN5131T1
MUN5132T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5136T1
MUN5137T1
MUN5133T1
MUN5134T1
MUN5135T1
MUN5137T1
MUN5115T1
MUN5116T1
MUN5112T1
MUN5113T1
MUN5114T1
MUN5115T1
MUN5116T1
MUN5114T1
MUN5111T1
= 833°C/W
50
4
Symbol
R
V
R1
1
OH
/R
100
2
0.055
0.038
15.4
32.9
15.4
1.54
32.9
0.17
0.38
Min
7.0
7.0
7.0
3.3
0.7
1.5
3.3
3.3
0.8
0.8
1.7
4.9
70
−
150
0.047
0.21
0.47
Typ
100
4.7
1.0
2.2
4.7
4.7
2.2
1.0
1.0
0.1
2.1
10
22
47
10
10
22
47
−
−
0.185
0.056
Max
28.6
61.1
28.6
2.86
61.1
0.25
0.56
130
6.1
1.3
2.9
6.1
6.1
1.2
1.2
2.6
13
13
13
−
−
Unit
Vdc
kW