MMUN2233LT1G ON Semiconductor, MMUN2233LT1G Datasheet - Page 5

• Manufacturer Part Number: MMUN2233LT1G
• Description: TRANS BRT NPN 100MA 50V SOT23
• Manufacturer: ON Semiconductor

Specifications of MMUN2233LT1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 246mW
• Mounting Type: Surface Mount
• Package / Case: TO-236-3, SC-59, SOT-23-3
• Transistor Polarity: NPN
• Collector-emitter Voltage: 50V
• Dc Current Gain (min): 80
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: SOT-23
• Collector Emitter Voltage V(br)ceo: 50V
• Base Input Resistor R1: 4.7kohm
• Base-emitter Resistor R2: 47kohm
• Resistor Ratio, R1 / R2: 0.1
• No. Of Pins: 3
• Dc Collector Current: 100mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MMUN2233LT1GOSTR

−
0.001
0.01
0.1
1
4
3
2
1
0
0
0
I
C
/I
B
V
R
= 10
10
, REVERSE BIAS VOLTAGE (VOLTS)
Figure 9. Output Capacitance
I
C
20
, COLLECTOR CURRENT (mA)
Figure 7. V
TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2212LT1G
20
40
CE(sat)
100
0.1
10
1
0
30
V
vs. I
Figure 11. Input Voltage vs. Output Current
O
T
= 0.2 V
A
C
= −25°C
60
10
f = 1 MHz
l
T
E
40
I
A
C
= 0 A
, COLLECTOR CURRENT (mA)
= 25°C
http://onsemi.com
75°C
25°C
20
80
50
5
0.001
1000
0.01
100
100
0.1
10
10
1
30
1
T
0
A
Figure 10. Output Current vs. Input Voltage
= −25°C
V
CE
75°C
= 10 V
2
I
40
C
V
Figure 8. DC Current Gain
, COLLECTOR CURRENT (mA)
in
25°C
, INPUT VOLTAGE (VOLTS)
50
75°C
4
10
25°C
25°C
6
T
A
T
= 75°C
A
= −25°C
V
8
O
−25°C
= 5 V
10
100