MUN5230T1G ON Semiconductor, MUN5230T1G Datasheet - Page 5

• Manufacturer Part Number: MUN5230T1G
• Description: TRANS BRT NPN 100MA 50V SOT-323
• Manufacturer: ON Semiconductor

Specifications of MUN5230T1G

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 3 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 5mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 202mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

MUN5211T1G Series
350
300
250
200
150
100
R
= 403C/W
50
θJA
0
-- 50
0
50
100
150
T
, AMBIENT TEMPERATURE (C)
A
Figure 1. Derating Curve
http://onsemi.com
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