MUN5132T1G ON Semiconductor, MUN5132T1G Datasheet - Page 5

• Manufacturer Part Number: MUN5132T1G
• Description: TRANS BRT PNP 100MA 50V SOT-363
• Manufacturer: ON Semiconductor

Specifications of MUN5132T1G

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 15 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Current - Collector Cutoff (max): 500nA
• Power - Max: 202mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

0.01
0.1
1
4
3
2
1
0
0
0
I
C
/I
B
= 10
10
Figure 4. Output Capacitance
V
Figure 2. V
R
, REVERSE BIAS VOLTAGE (VOLTS)
20
I
C
, COLLECTOR CURRENT (mA)
20
TYPICAL ELECTRICAL CHARACTERISTICS − MUN5111T1
CE(sat)
100
0.1
10
1
0
T
versus I
30
Figure 6. Input Voltage versus Output Current
A
75°C
V
= -25°C
O
= 0.2 V
10
40
C
f = 1 MHz
l
T
E
40
A
= 0 V
= 25°C
I
C
, COLLECTOR CURRENT (mA)
25°C
http://onsemi.com
20
50
50
5
T
0.001
1000
30
0.01
A
100
100
0.1
= -25°C
10
10
1
75°C
1
0
Figure 5. Output Current versus Input Voltage
1
25°C
40
75°C
2
Figure 3. DC Current Gain
I
C
V
, COLLECTOR CURRENT (mA)
in
T
50
3
, INPUT VOLTAGE (VOLTS)
A
25°C
= -25°C
4
10
5
6
V
O
7
= 5 V
8
V
T
CE
A
= 75°C
= 10 V
-25°C
9
25°C
100
10