MMUN2113LT1G ON Semiconductor, MMUN2113LT1G Datasheet - Page 3

TRANS BRT PNP 100MA 50V SOT23

MMUN2113LT1G

Manufacturer Part Number
MMUN2113LT1G
Description
TRANS BRT PNP 100MA 50V SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of MMUN2113LT1G

Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
47K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Power - Max
246mW
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
MMUN2113LT1GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
MMUN2113LT1G
Manufacturer:
ON Semiconductor
Quantity:
260
Part Number:
MMUN2113LT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
MMUN2113LT1G
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
ON CHARACTERISTICS (Note 5)
DC Current Gain
Collector-Emitter Saturation Voltage
Output Voltage (on)
Output Voltage (off)
(V
(I
(I
(I
(V
(V
(V
(V
(V
C
C
C
CE
CC
CC
CC
CC
CC
= 10 mA, I
= 10 mA, I
= 10 mA, I
= 10 V, I
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
= 5.0 V, V
C
B
B
B
B
B
B
B
B
= 5.0 mA)
= 0.3 mA)
= 5 mA)
= 1 mA)
= 2.5 V, R
= 3.5 V, R
= 0.5 V, R
= 0.25 V, R
= 0.050 V, R
Characteristic
L
L
L
L
= 1.0 kW)
= 1.0 kW)
= 1.0 kW)
L
= 1.0 kW)
= 1.0 kW)
(T
A
= 25°C unless otherwise noted) (Continued)
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3
Symbol
V
CE(sat)
V
V
h
FE
OH
OL
Min
160
160
3.0
8.0
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
4.9
35
60
80
80
15
80
80
Typ
100
140
140
250
250
140
130
5.0
60
15
27
Max
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Unit
Vdc
Vdc
Vdc

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