DDTA144GE-7 Diodes Zetex, DDTA144GE-7 Datasheet - Page 2

• Manufacturer Part Number: DDTA144GE-7
• Description: TRANS PREBIASED PNP 150MW SOT523
• Manufacturer: Diodes Zetex

Specifications of DDTA144GE-7

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SOT-523
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector-Emitter Saturation Voltage
DC Current Transfer Ratio
Bleeder Resistor (R
Gain-Bandwidth Product*
* Transistor - For Reference Only
DS30320 Rev. 6 - 2
2
Characteristic
) Tolerance
DDTA114GE
DDTA124GE
DDTA144GE
DDTA115GE
DDTA114GE
DDTA124GE
DDTA144GE
DDTA115GE
@T
A
= 25°C unless otherwise specified
Symbol
V
BV
BV
BV
I
I
CE(sat)
ΔR
h
CBO
EBO
f
FE
CBO
CEO
EBO
T
www.diodes.com
2
2 of 4
-300
-140
Min
-50
-50
-65
-30
-30
30
56
68
82
⎯
⎯
⎯
5
Typ
250
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Max
-580
-260
-130
-0.5
-0.3
+30
-58
⎯
⎯
⎯
⎯
⎯
MHz
Unit
μA
μA
⎯
%
V
V
V
V
I
I
I
I
I
I
V
V
I
I
V
f = 100MHz
C
C
E
E
E
E
C
C
CB
EB
CE
= -50μA
= -1mA
= -720μA, DDTA114GE
= -330μA, DDTA124GE
= -160μA, DDTA144GE
= -72μA, DDTA115GE
= -10mA, I
= -5mA, V
= -4V
= -50V
= -10V, I
DDTA (R2-ONLY SERIES) E
Test Condition
CE
B
E
= -0.5mA
= 5mA,
= -5V
⎯
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