DTD123TKT146 Rohm Semiconductor, DTD123TKT146 Datasheet

DTD123TKT146

Manufacturer Part Number

DTD123TKT146

Description

TRANS NPN 50V 500MA SOT-346

Manufacturer

Rohm Semiconductor

Datasheet

1.DTD123TKT146.pdf (3 pages)

Specifications of DTD123TKT146

Transistor Type

NPN - Pre-Biased

Current - Collector (ic) (max)

500mA

Voltage - Collector Emitter Breakdown (max)

40V

Resistor - Base (r1) (ohms)

2.2K

Dc Current Gain (hfe) (min) @ Ic, Vce

100 @ 50mA, 5V

Vce Saturation (max) @ Ib, Ic

300mV @ 2.5mA, 50mA

Frequency - Transition

200MHz

Power - Max

200mW

Mounting Type

Surface Mount

Package / Case

SC-59-3, SMT3, SOT-346, TO-236

Transistor Polarity

NPN

Collector Emitter Voltage V(br)ceo

40V

Power Dissipation Pd

200mW

Dc Collector Current

50mA

Operating Temperature Range

-55Â°C To +150Â°C

Transistor Case Style

SOT-346

Dc Current Gain Hfe

250

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

DTD123TKT146
DTD123TKT146TR

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

DTD123TKT146

Manufacturer:

Rohm Semiconductor

Quantity:

25 694

Company:

Meier Automation Equipment Co., Limited

Part Number:

DTD123TKT146

Manufacturer:

ROHM/罗姆

Quantity:

20 000

Current page: 1 of 3
Download datasheet (134Kb)

500mA / 40V Digital transistors

(with built-in resistors)

 Applications

Inverter, Interface, Driver

 Features

1) Built-in bias resistors enable the configuration of an inverter

2) The bias resistors consist of thin-film resistors with complete

3) Only the on / off conditions need to be set for operation,

 Structure

NPN epitaxial planar silicon transistor

(Resistor built-in type)

 Packaging specifications

 Absolute maximum ratings (Ta=25C)

○

Part No.

DTD123TK

www.rohm.com

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power dissipation

Junction temperature

Storage temperature

circuit without connecting external input resistors (see

equivalent circuit).

isolation to allow negative biasing of the input. They also have

the advantage of almost completely eliminating parasitic

effects.

making the device design easy.

DTD123TK

Parameter

Package

Packaging type

Code

Basic ordering

unit (pieces)

Symbol

Tstg

Taping

SMT3

T146

3000

CBO

CEO

EBO

55 to +150

DTD123TK

Limits

500

200

150

Unit

C

1/2

 Dimensions (Unit : mm)

 Inner circuit

DTD123TK

ROHM : SMT3

EIAJ : SC-59

B : Base

C : Collector

E : Emitter

=2.2k

0.95 0.95

( 3 )

( 2 )

Abbreviated symbol : F02

1.9

2.9

0.4

( 1 )

Each lead has same dimensions

0.15

1.1

0.8

2009.06 - Rev.B

(1) Emitter

(2) Base

(3) Collector

Related parts for DTD123TKT146

DTD123TKT146 Summary of contents

Page 1

Digital transistors (with built-in resistors) DTD123TK  Applications Inverter, Interface, Driver  Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist ...

Page 2

DTD123TK  Electrical characteristics (Ta=25C) Parameter Symbol Collector-base breakdown voltage BV CBO Collector-emitter breakdown voltage BV CEO Emitter-base breakdown voltage BV EBO Collector cutoff current I CBO Emitter cutoff current I EBO Collector-emitter saturation voltage V CE(sat) DC current transfer ...

Page 3

No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...

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