DTD113ZKT146 Rohm Semiconductor, DTD113ZKT146 Datasheet - Page 3

• Manufacturer Part Number: DTD113ZKT146
• Description: TRAN DIGIT NPN 50V 500MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of DTD113ZKT146

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 82 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 500mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-346
• Dc Current Gain Hfe: 82
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTD113ZKT146TR

 Electrical characteristic curves
○
DTD113ZK/DTD113ZU
c
www.rohm.com
500m
200m
100m
500m
200m
100m
100
50m
20m
10m
Fig.1 Input voltage vs. output current
2009 ROHM Co., Ltd. All rights reserved.
50
20
10
5m
2m
1m
500μ 1m
5
2
1
500μ 1m
Fig.4 Output voltage vs. output current
1
(ON characteristics)
2m
OUTPUT CURRENT : I
2m
OUTPUT CURRENT : I
Ta=−40 °C
5m 10m 20m 50m 100m 200m 500m
5m 10m 20m
100 °C
25 °C
Ta = 100 °C
−40 °C
25 °C
50m
O
100m200m
O
(
( A)
A)
V
l
O
O
= 0.3V
/l
I
= 20
500m
200μ
100μ
10m
50μ
50μ
20μ
10μ
5m
2m
1m
5μ
2μ
1μ
Fig.2 Output current vs. input voltage
0
0.5
(OFF characteristics)
INPUT VOLTAGE : V
1.0
3/3
Ta = 100 °C
1.5
−40 °C
25 °C
2.0
I (off)
(
V)
V
2.5
CC
= 5V
3.0
500
200
100
Fig. 3 DC current gain vs. output current
50
20
10
1k
5
2
1
500μ
1m
2m
OUTPUT CURRENT : I
Ta = 100 °C
−40 °C
25 °C
5m 10m 20m 50m
2009.05 - Rev.C
Data Sheet
100m200m
O
( A)
V
O
= 5V
500m