DTD123EKT146 Rohm Semiconductor, DTD123EKT146 Datasheet
DTD123EKT146
Manufacturer Part Number
DTD123EKT146
Description
TRANS NPN 50V 500MA SOT-346
Manufacturer
Rohm Semiconductor
Datasheet
1.DTD123EKT146.pdf
(3 pages)
Specifications of DTD123EKT146
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
500mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
2.2K
Dc Current Gain (hfe) (min) @ Ic, Vce
39 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 2.5mA, 50mA
Frequency - Transition
200MHz
Power - Max
200mW
Mounting Type
Surface Mount
Package / Case
SC-59-3, SMT3, SOT-346, TO-236
Transistor Polarity
NPN
Collector Emitter Voltage V(br)ceo
50V
Power Dissipation Pd
200mW
Dc Collector Current
500mA
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-346
Dc Current Gain Hfe
39
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTD123EKT146
DTD123EKT146TR
DTD123EKT146TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
500mA / 50V Digital transistors
(with built-in resistors)
Applications
Inverter, Interface, Driver
Features
1) Built-in bias resistors enable the configuration of an inverter
2) The bias resistors consist of thin-film resistors with complete
3) Only the on / off conditions need to be set for operation,
Structure
NPN epitaxial planar silicon transistor
(Resistor built-in type)
Packaging specifications
Absolute maximum ratings (Ta=25C)
○
c
Part No.
DTD123EK
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
www.rohm.com
circuit without connecting external input resistors (see
equivalent circuit).
isolation to allow negative biasing of the input. They also have
the advantage of almost completely eliminating parasitic
effects.
making the device design easy.
DTD123EK
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Package
Packaging type
Code
Basic ordering unit (pieces)
Symbol
Tstg
V
V
Pd
I
Tj
CC
C
IN
Taping
SMT3
−55 to +150
T146
3000
DTD123EK
−10 to +12
Limits
500
200
150
50
Unit
mW
mA
V
V
C
C
1/2
Dimensions (Unit : mm)
Inner circuit
R
1
IN
=R
DTD123EK
ROHM : SMT3
EIAJ : SC-59
IN
2
=2.2kΩ
R
1
R
2
GND
0.95 0.95
( 3 )
( 2 )
Abbreviated symbol: F22
1.9
2.9
0.4
OUT
GND
OUT
( 1 )
Each lead has same dimension
0.15
1.1
0.8
2009.06 - Rev.C
(1) GND
(2) IN
(3) OUT
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DTD123EKT146 Summary of contents
Page 1
Digital transistors (with built-in resistors) DTD123EK Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist ...
Page 2
DTD123EK Electrical characteristics (Ta=25C) Parameter Symbol V I(off) Input voltage V I(on) Output voltage V O(on) Input current I I Output current I O(off) DC current gain G I Input resistance R 1 Resistance ratio ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...