DTD113EKT146 Rohm Semiconductor, DTD113EKT146 Datasheet - Page 2

• Manufacturer Part Number: DTD113EKT146
• Description: TRANS NPN 50V 500MA SOT-346
• Manufacturer: Rohm Semiconductor

Specifications of DTD113EKT146

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 1K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 33 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-59-3, SMT3, SOT-346, TO-236
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 500mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-346
• Dc Current Gain Hfe: 33
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTD113EKT146; DTD113EKT146TR

 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
○
DTD113EK
∗
c
Fig.1 Input voltage vs. output current
Fig.4 Output voltage vs. output current
www.rohm.com
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
500m
200m
100m
500m
200m
100m
Characteristics of built-in transistor
100
50m
20m
10m
2009 ROHM Co., Ltd. All rights reserved.
50
20
10
5m
2m
1m
500μ 1m
500 μ 1m
5
2
1
1
(ON characteristics)
Parameter
Ta= −40 C
OUTPUT CURRENT : I
2m
OUTPUT CURRENT : I
2m
100 C
25 C
5m 10m 20m 50m100m 200m 500m
5m 10m 20m 50m
Ta=100 C
−40 C
25 C
O
100m200m
O
(A)
(A)
V
l
O
O
=0.3V
/l
Symbol
I
=20
R
V
V
V
I
O(off)
O(on)
R
2
G
I(off)
I(on)
f
I
/R
500m
T
I
1
I
1
∗
Min.
0.7
0.8
33
−
3
−
−
−
−
Typ.
200
0.1
−
−
−
−
−
1
1
Fig.2 Output current vs. input voltage
500μ
200μ
100μ
10m
50μ
20μ
10μ
5m
2m
1m
5μ
2μ
1μ
0
Max.
Ta=100 C
0.5
0.3
7.2
0.5
1.3
1.2
(OFF characteristics)
−
−
−
−40 C
0.5
25 C
INPUT VOLTAGE : V
MHz
Unit
mA
1.0
μA
kΩ
V
V
−
−
2/2
1.5
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
/I
=5V
=0.3V, I
=5V, I
I
=50mA/2.5mA
2.0
=5V, I
=50V, V
=10V, I
I(off)
(V)
O
V
2.5
=50mA
CC
O
E
O
=100μA
=5V
I
= −50mA, f=100MHz
=0V
=20mA
Conditions
3.0
−
−
500
200
100
50
20
10
1k
500μ
5
2
1
1m
Fig.3 DC current gain
2m
OUTPUT CURRENT : I
vs. output current
5m 10m 20m
2009.06 - Rev.C
Ta=100 C
−40 C
25 C
Data Sheet
50m
O
100m200m
(A)
V
O
=5V
500m