DTB713ZMT2L Rohm Semiconductor, DTB713ZMT2L Datasheet - Page 2

• Manufacturer Part Number: DTB713ZMT2L
• Description: TRANS DGTL PNP 30V 200MA VMT3
• Manufacturer: Rohm Semiconductor

Specifications of DTB713ZMT2L

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Resistor - Base (r1) (ohms): 1K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 140 @ 100mA, 2V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Frequency - Transition: 260MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: VMT3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTB713ZMT2LTR

∗ Characteristics of built-in transistor.
○
DTB713ZE / DTB713ZM
c
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
www.rohm.com
Electrical characteristics (Ta=25°C)
Electrical characteristics curves
1000
2009 ROHM Co., Ltd. All rights reserved.
100
100
10
0.1
10
1
1
0.1
0.1
Parameter
－ 40 ℃
85 ℃
25 ℃
Ta=125 ℃
Ta= － 40 ℃
25 ℃
85 ℃
125 ℃
OUTPUT CURRENT : I
OUTPUT CURENT : I
1
1
∗
10
10
Symbol
O
R
V
V
V
I
O
100
(mA)
O(off)
100
R
O(on)
G
2
I(off)
I(on)
f
(mA)
I
/R
T
I
V
1
I
V
0
O
= -0.3V
1
= -2V
1000
1000
Min.
−2.5
140
0.7
8.0
−
−
−
−
−
Typ.
−70
260
1.0
10
−
−
−
−
−
Max.
−300
−0.3
−6.4
−0.5
1.3
12
−
−
−
100
0.1
10
1
0.01
0.1
0
1
MHz
Unit
V
mV
mA
µA
kΩ
1
V
CC
−
−
= -5V
－ 40 ℃
85 ℃
25 ℃
Ta=125 ℃
INPUT VOLTAGE : V
OUOPUT CURRENT : I
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
2/2
/I
= −5V
0.5
= −0.3V, I
= −2V, I
I
= −50mA / −2.5mA
= −10V, I
= −5V, I
= −30V, V
10
O
Conditions
= −100mA
O
E
O
= −100µA
I
=5mA, f=100MHz
I
=0V
(off) (V)
= −20mA
1
100
－ 40 ℃
−
−
85 ℃
25 ℃
Ta=125 ℃
O
(mA)
I
C
/I
I
=20
1000
1.5
2009.05 - Rev.B
Data Sheet