DTC123YUAT106 Rohm Semiconductor, DTC123YUAT106 Datasheet - Page 2

• Manufacturer Part Number: DTC123YUAT106
• Description: TRANS NPN 50V 100MA SOT-323
• Manufacturer: Rohm Semiconductor

Specifications of DTC123YUAT106

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 33 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Digital: UMT
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 100mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-323
• No. Of: RoHS Compliant
• Transistor Polarity: NPN
• Dc Current Gain Hfe: 33
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTC123YUAT106; DTC123YUAT106TR

 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
○
DTC123YE / DTC123YUA / DTC123YKA
Characteristics of built-in transistor
c
www.rohm.com
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Fig.1
500m
200m
100m
500m
200m
100m
50m
20m
10m
2009 ROHM Co., Ltd. All rights reserved.
100
5m
2m
1m
50
20
10
100 200
100 200
5
2
1
1
Fig.4
Parameter
(ON characteristics)
Input voltage vs. output current
OUTPUT CURRENT : I
OUTPUT CURRENT : I
500 1m
500 1m
Output voltage vs. output
current
Ta100°C
40°C
Ta40°C
25°C
2m
2m
100°C
25°C
5m 10m 20m 50m 100m
5m 10m 20m
O
O
Symbol
R
(A)
(A)
V
V
V
I
O(off)
V
l
O(on)
G
R
2
O
I(off)
I(on)
f
I
/R
O
T
I
/l
1
0.3V
I
I
20

1
50m 100m
Min.
1.54
3.6
33

3




Typ.
250
0.1
2.2
4.5





Max.
2.86
0.3
0.3
3.8
0.5
5.5



Fig.2
500
200
100
10m
50
20
10
5m
2m
1m
5
2
1
0
MHz
Unit
mA
A
k
V
V


Output current vs. input voltage
(OFF characteristics)
0.5
INPUT VOLTAGE : V
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
/I
5V
0.3V, I
5V, I
1.0
I
10mA/0.5mA
5V, I
50V, V
10V, I
Ta100°C
2/2
O
40°C
1.5
10mA
25°C
O
E
Conditions
O
100A
I
5mA, f100MHz
0V
20mA
2.0


I (off)
(V)
V
2.5
CC
5V
3.0
500
200
100
50
20
10
1k
5
2
1
100 200
Fig.3
OUTPUT CURRENT : I
500 1m
current
DC current gain vs. output
Ta100°C
2009.06 - Rev.B
40°C
25°C
2m
Data Sheet
5m 10m 20m
O
(A)
V
O
5V
50m 100m