DTC114WUAT106 Rohm Semiconductor, DTC114WUAT106 Datasheet - Page 2

• Manufacturer Part Number: DTC114WUAT106
• Description: TRANS NPN 50V 100MA SOT-323
• Manufacturer: Rohm Semiconductor

Specifications of DTC114WUAT106

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 24 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTC114WUAT106; DTC114WUAT106TR

 Absolute maximum ratings (Ta=25C)
∗
 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
○
DTC114WE / DTC114WUA / DTC114WKA
∗
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
c
www.rohm.com
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Fig.4 Output voltage vs. Output current
When mounted on the recommended land
Characteristics of built-in transistor
500m
200m
100m
500m
200m
100m
Fig.1 Input voltage vs. Output current
50m
20m
10m
100
2009 ROHM Co., Ltd. All rights reserved.
50
20
10
100μ 200μ 500μ 1m 2m
5
2
1
1
1m
(ON characteristics)
2m
Ta= −40°C
OUTPUT CURRENT : I
OUTPUT CURRENT : I
Parameter
DTC114WE
DTC114WUA / DTC114WKA
Ta=100°C
5m
Ta= 25°C
Parameter
10m
Ta=100°C
5m 10m 20m 50m 100m
20m
Ta= 25°C
O
O
Ta= −40°C
(A)
(A)
I
V
O
50m
O
/ I
=0.3V
I
= 20
100m
Symbol
R
V
V
V
I
O(off)
R
O(on)
G
2
I(off)
I(on)
f
I
/R
T
I
1
I
1
Symbol
∗
I
C(Max.)
Tstg
V
P
V
I
Tj
CC
O
D
I
Min.
0.37
Fig.2 Output current vs. Input voltage
24
500μ
200μ
100μ
10m
−
3
−
−
−
7
−
50μ
20μ
10μ
5m
2m
1m
5μ
2μ
1μ
0
V
CC
(OFF characteristics)
=5V
500m
−55 to +150
Typ.
0.47
250
−10 to +30
0.1
10
INPUT VOLTAGE : V
−
−
−
−
−
Limits
Ta=25°C
100
100
150
150
200
Ta=100°C
50
1
2/2
∗
∗
Max.
0.88
0.57
0.8
0.3
0.5
13
1.5
−
−
−
2
MHz
Unit
I(off)
mA
μA
kΩ
V
V
−
−
Unit
mW
mA
Ta= −40°C
°C
°C
(V)
V
V
2.5
V
V
I
V
V
I
V
O
O
3
CC
O
I
CC
CE
= 10mA, I
= 10mA, V
= 5V
= 0.3V, I
= 5V, I
= 50V, V
= 10V, I
O
O
= 100μA
I
E
= 0.5mA
= 2mA
I
O
= −5mA, f = 100MHz
= 0V
Conditions
= 5V
Fig.3 DC current gain vs. Output current
−
−
500
200
100
50
20
10
1k
100μ 200μ 500μ 1m 2m
5
2
1
OUTPUT CURRENT : I
2009.06 - Rev.C
Ta= 25°C
Data Sheet
5m 10m 20m 50m 100m
Ta=100°C
O
Ta= −40°C
(A)
V
O
=5V