DTC114YMT2L Rohm Semiconductor, DTC114YMT2L Datasheet - Page 2

• Manufacturer Part Number: DTC114YMT2L
• Description: TRANS DGTL NPN 50V 70MA VMT3
• Manufacturer: Rohm Semiconductor

Specifications of DTC114YMT2L

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: VMT3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTC114YMT2LTR

 Absolute maximum ratings (Ta=25C)
 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
∗ Characteristics of built-in transistor
○
DTC114YM / DTC114YE / DTC114YUA / DTC114YKA
c
www.rohm.com
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Fig.1 Input voltage vs. output current
500m
200m
100m
500m
200m
100m
20m
10m
50m
2009 ROHM Co., Ltd. All rights reserved.
100
5m
2m
1m
50
20
10
100μ 200μ
100μ 200μ
5
2
1
1
Fig.4 Output voltage vs. output
Parameter
(ON characteristics)
Parameter
OUTPUT CURRENT : I
OUTPUT CURRENT : I
current
500μ 1m
500μ 1m
Ta=100°C
Ta=−40°C
−40°C
25°C
100°C
2m
2m
25°C
Symbol
5m 10m 20m 50m 100m
5m 10m 20m 50m 100m
I
C(Max.)
Tstg
V
V
P
I
Tj
CC
O
IN
D
O
O
Symbol
V
R
(A)
(A)
V
V
I
O(off)
V
l
O(on)
G
R
2
O
DTC114YM
I(off)
I(on)
f
I
/R
O
T
I
/l
1
=0.3V
I
I
=20
1
∗
Min.
1.4
3.7
68
150
−
−
−
−
7
−
DTC114YE
−55 to +150
Typ.
250
0.1
4.7
−6 to +40
10
−
−
−
−
−
Limits
100
150
50
70
DTC114YUA DTC114YKA
Max.
0.88
0.3
0.3
0.5
5.7
13
−
−
−
Fig.2 Output current vs. input voltage
500μ
200μ
100μ
10m
50μ
20μ
10μ
5m
2m
1m
5μ
2μ
1μ
0
200
MHz
Unit
mA
μA
kΩ
V
V
−
−
(OFF characteristics)
0.5
INPUT VOLTAGE : V
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
/I
=5V
=0.3V, I
=5V, I
1.0
I
=5mA/0.25mA
=10V, I
=5V, I
=50V, V
Ta=100°C
2/2
Unit
mW
O
mA
−40°C
1.5
°C
°C
O
V
V
=5mA
25°C
O
=100μA
E
Conditions
=1mA
I
=−5mA, f=100MHz
=0V
2.0
−
−
I(off)
(V)
V
2.5
CC
=5V
3.0
500
200
100
20
10
50
1k
5
2
1
100μ 200μ
Fig.3 DC current gain vs. output
V
O
=5V
OUTPUT CURRENT : I
Ta=100°C
current
500μ 1m
−40°C
25°C
2009.06 - Rev.B
2m
Data Sheet
5m 10m 20m
O
(A)
50m 100m