DTC143TETL Rohm Semiconductor, DTC143TETL Datasheet - Page 2

• Manufacturer Part Number: DTC143TETL
• Description: TRANS NPN 50V 100MA SOT-416
• Manufacturer: Rohm Semiconductor

Specifications of DTC143TETL

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: SC-75-3, SOT-416
• Digital: EM3
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 150mW
• Dc Collector Current: 5mA
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-416
• No. Of: RoHS Compliant
• Transistor Polarity: NPN
• Dc Current Gain Hfe: 250
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTC143TETL; DTC143TETLTR

 Packaging specifications
 Absolute maximum ratings (Ta=25C)
 Electrical characteristics (Ta=25C)
 Electrical characteristic curves
○
DTC143TM / DTC143TE / DTC143TUA / DTC143TKA
∗ Characteristics of built-in transistor
Part No.
DTC143TM
DTC143TE
DTC143TUA
DTC143TKA
c
www.rohm.com
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Input resistance
Transition frequency
500
100
200
50
20
10
1k
2009 ROHM Co., Ltd. All rights reserved.
5
2
1
100μ 200μ 500μ 1m
Parameter
Fig.1 DC current gain vs.
COLLECTOR CURRENT : I
Parameter
Package
Packaging type
Code
Basic ordering
unit (pieces)
collector current
Ta=100°C
2m
−40°C
25°C
5m 10m 20m
Symbol
C
V
V
V
Tstg
V
Taping
P
(A)
VMT3
CBO
CEO
EBO
I
Tj
CE
8000
C
T2L
C
= 5V
−
−
−
50m 100m
Symbol
V
BV
BV
BV
I
I
CE(sat)
h
CBO
EBO
R
DTC143TM
f
FE
CBO
CEO
EBO
T
1
∗
Taping
EMT3
3000
TL
−
−
−
Min.
3.29
150
100
50
50
5
−
−
−
−
DTC143TE
500m
200m
100m
50m
20m
10m
5m
2m
1m
Fig.2 Collector-emitter saturation
Taping
100μ 200μ 500μ 1m
UMT3
1
−55 to +150
T106
3000
Typ.
250
250
4.7
−
−
−
−
−
−
−
−
−
Limits
100
150
50
50
5
COLLECTOR CURRENT : I
DTC143TUA DTC143TKA
voltage vs. collector current
Max.
6.11
600
0.5
0.5
0.3
Taping
SMT3
−
−
−
−
T146
3000
−
−
−
Ta=100°C
200
2m
MHz
Unit
−40°C
kΩ
μA
μA
V
V
V
V
−
25°C
5m 10m 20m
2/2
I
I
I
V
V
I
I
V
C
C
E
C
C
=50μA
CB
EB
CE
=50μA
=1mA
/I
=1mA, V
B
=50V
=4V
=10V, I
=5mA/0.25mA
Unit
mW
C
mA
°C
°C
l
C
V
V
V
(A)
/l
B
=20
50m 100m
CE
E
Conditions
=−5mA, f=100MHz
=5V
−
2010.08 - Rev.C
Data Sheet