DTC115EUAT106 Rohm Semiconductor, DTC115EUAT106 Datasheet - Page 2

• Manufacturer Part Number: DTC115EUAT106
• Description: TRANS NPN 50V 20MA SOT-323
• Manufacturer: Rohm Semiconductor

Specifications of DTC115EUAT106

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 100K
• Resistor - Emitter Base (r2) (ohms): 100K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 82 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Frequency - Transition: 250MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70, SOT-323
• Transistor Polarity: NPN
• Collector Emitter Voltage V(br)ceo: 50V
• Power Dissipation Pd: 200mW
• Dc Collector Current: 100mA
• Transistor Case Style: SOT-323
• No. Of Pins: 3
• Svhc: No SVHC (18-Jun-2010)
• Dc: RoHS Compliant
• Dc Current Gain Hfe: 82
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTC115EUAT106; DTC115EUAT106TR

○
DTC115EM / DTC115EE / DTC115EUA / DTC115EKA
∗ Characteristics of built-in transistor
c
www.rohm.com
Supply voltage
Input voltage
Output current
Power
dissipation
Junction temperature
Storage temperature
Absolute maximum ratings (Ta=25°C)
Electrical characteristics (Ta=25°C)
Electrical characteristics curves
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
1000
2009 ROHM Co., Ltd. All rights reserved.
100
0.1
10
10
1
1
0.01
0.01
Parameter
Ta= － 40 ℃
－ 40 ℃
25 ℃
85 ℃
125 ℃
85 ℃
25 ℃
Ta=125 ℃
OUTPUT CURRENT : I
OUTPUT CURENT : I
DTC115EM / DTC115EE
DTC115EUA / DTC115EKA
Parameter
0.1
0.1
1
1
Symbol
V
R
V
V
I
O(off)
O(on)
R
2
G
I(off)
I(on)
f
I
/R
T
I
1
I
O
1
∗
O
(mA)
10
10
(mA)
V
V
0
O
= 0.3V
= 5V
Min.
0.8
82
70
−
3
−
−
−
−
Symbol
100
I
100
C(Max.)
Tstg
V
V
P
I
Tj
CC
O
IN
D
Typ.
100
250
0.1
−
−
−
−
−
1
−55 to +150
−10 to +40
Limits
100
150
200
150
50
20
Max.
0.15
130
0.5
0.3
0.5
1.2
−
−
−
0.01
0.1
10
0.01
1
0.1
1
0
0.1
MHz
Unit
mA
Unit
mW
µA
kΩ
V
mA
°C
°C
V
V
−
−
V
V
CC
－ 40 ℃
85 ℃
25 ℃
= 5V
Ta=125 ℃
INPUT VOLTAGE : V
OUOPUT CURRENT : I
V
V
I
V
V
I
V
O
O
2/2
CC
O
I
CC
CE
=5mA, I
=5V
=5mA, V
=0.3V, I
1
=5V, I
=50V, V
=10V, I
1
O
I
=0.25mA
O
O
Conditions
=100µA
E
=1mA
=5V
I
=−5mA, f=100MHz
=0V
I
(off) (V)
2
－ 40 ℃
10
85 ℃
25 ℃
Ta=125 ℃
O
(mA)
I
C
/I
−
−
I
=20
100
3
2009.05 - Rev.B
Data Sheet