DTA143EMT2L Rohm Semiconductor, DTA143EMT2L Datasheet - Page 2
![TRANS PNP 50V 100MA VMT3](/photos/5/48/54804/vmt3_pkg_sml.jpg)
DTA143EMT2L
Manufacturer Part Number
DTA143EMT2L
Description
TRANS PNP 50V 100MA VMT3
Manufacturer
Rohm Semiconductor
Datasheet
1.DTA143EMT2L.pdf
(3 pages)
Specifications of DTA143EMT2L
Transistor Type
PNP - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 500µA, 10mA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
VMT3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
DTA143EMT2L
DTA143EMT2LTR
DTA143EMT2LTR
Absolute maximum ratings (Ta=25C)
Electrical characteristics (Ta=25C)
Electrical characteristic curves
∗ Characteristics of built-in transistor
○
DTA143EM / DTA143EE / DTA143EUA / DTA143EKA
c
www.rohm.com
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
−500m
−200m
−100m
Fig.1 Input voltage vs. output current
−500m
−200m
−100m
−50m
−20m
−10m
−100
−5m
−2m
−1m
2009 ROHM Co., Ltd. All rights reserved.
−50
−20
−10
−2
−1
−100μ
−100μ
−5
−1
Fig.4 Output voltage vs. output
Parameter
−200μ
−200μ
(ON characteristics)
Ta=−40°C
Parameter
OUTPUT CURRENT : I
OUTPUT CURRENT : I
−500μ
−500μ
100°C
current
25°C
−1m
−1m
−2m
−2m
Ta=100°C
−40°C
−5m
25°C
Symbol
−5m
I
C(Max.)
Tstg
V
V
P
I
Tj
−10m
−10m
CC
O
IN
D
O
O
Symbol
−20m
−20m
V
R
(A)
(A)
V
V
I
V
O(off)
l
O(on)
G
R
2
O
O
I(off)
I(on)
f
DTA143EM
I
/R
T
I
=−0.3V
/l
1
I
I
−50m
=20
−50m
1
∗
−100m
−100m
Min.
3.29
0.8
−3
30
−
−
−
−
−
150
DTA143EE
Typ.
−0.1
250
4.7
−55 to +150
−
−
−
−
−
1
−30 to +10
Limits
−100
−100
−50
150
DTA143EUA DTA143EKA
Max.
−0.5
−0.3
−1.8
−0.5
6.11
1.2
−
−
−
Fig.2 Output current vs. input voltage
−500μ
−200μ
−100μ
−10m
−50μ
−20μ
−10μ
−5m
−2m
−1m
−5μ
−2μ
−1μ
0
MHz
Unit
mA
Ta=100°C
200
μA
kΩ
V
V
−
−
(OFF characteristics)
−40°C
−0.5
25°C
INPUT VOLTAGE : V
V
V
I
V
V
V
V
O
CC
O
I
CC
O
CE
/I
=−5V
−1.0
=−0.3V, I
=−5V, I
I
=−10mA/−0.5mA
=−10V, I
=−5V, I
=−50V, V
2/2
−1.5
Unit
mW
mA
°C
°C
O
V
V
O
=−10mA
Conditions
O
=−100μA
E
=−20mA
I
=5mA, f=100MHz
=0V
−2.0
−
−
I(off)
(V)
V
−2.5
CC
=−5V
−3.0
200
500
100
50
10
20
1k
5
2
1
−100μ
Fig.3 DC current gain vs. output
−200μ
OUTPUT CURRENT : I
−500μ
current
Ta=100°C
−40°C
−1m
25°C
2009.06 - Rev.C
−2m
Data Sheet
−5m
−10m
O
−20m
(A)
V
O
=−5V
−50m
−100m