DTA114EMT2L Rohm Semiconductor, DTA114EMT2L Datasheet - Page 3

• Manufacturer Part Number: DTA114EMT2L
• Description: TRANS PNP 50V 50MA VMT3
• Manufacturer: Rohm Semiconductor

Specifications of DTA114EMT2L

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: VMT3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DTA114EMT2L; DTA114EMT2LTR

○
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c
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Fig.1 Input voltage vs. output current
Electrical characteristic curves
−500m
−200m
−100m
500
200
100
−100
50
20
10
2009 ROHM Co., Ltd. All rights reserved.
−50
−20
−10
1k
−100µ
−5
−2
−1
−100µ
5
2
1
Fig.3 DC current gain vs. output
(ON characteristics)
−200µ −500µ
−200µ
Ta=−40°C
OUTPUT CURRENT : I
OUTPUT CURRENT : I
current
−500µ
100°C
25°C
−1m
−1m
Ta=100°C
−2m
−2m
−40°C
25°C
−5m
−5m
−10m
−10m
O
O
−20m
−20m
(A)
(A)
V
V
O
O
=−0.3V
=−5V
−50m
−50m
−100m
−100m
Fig.4 Output voltage vs. output current
Fig.2 Output current vs. input voltage
−200m
−500m
−100m
−500µ
−200µ
−100µ
−10m
−50m
−20m
−10m
−5m
−2m
−50µ
−20µ
−10µ
3/3
−1m
−5m
−2m
−1m
−5µ
−2µ
−1µ
−100µ
−1
0
Ta=100°C
(OFF characteristics)
−200µ
−0.5
−40°C
25°C
OUTPUT CURRENT : I
INPUT VOLTAGE : V
−500µ
−1.0
−1m
−2m
Ta=100°C
−1.5
−40°C
25°C
−5m
−2.0
−10m
I(off)
O
−20m
(A)
(V)
V
l
−2.5
O
CC
/l
I
=20
−50m
=−5V
−100m
−3.0
2009.03 - Rev.C
Data Sheet