DRDNB26W-7 Diodes Inc, DRDNB26W-7 Datasheet - Page 6

• Manufacturer Part Number: DRDNB26W-7
• Description: ARRAY NPN TRANS/SW DIODE SOT363
• Manufacturer: Diodes Inc

Specifications of DRDNB26W-7

• Transistor Type: NPN - Pre-Biased + Diode
• Current - Collector (ic) (max): 600mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 220
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 47 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 200MHz
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: 6-TSSOP, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DRDNB26WDITR

DS30573 Rev. 10 - 2
0.500
0.300
0.250
0.200
0.150
0.100
0.050
0.450
0.400
0.350
0.9
0.8
0.6
0.4
0.2
1.0
0.7
0.5
0.3
0.1
0.5
0.4
0.3
0.6
0.2
0.1
0.1
0
0
Fig.11, Typical Collector-Emitter Saturation Voltage vs.
1
1
V
CE
Fig. 7, Typical Collector-Emitter Saturation Voltage
I
I
Fig. 9, Typical Base-Emitter On Voltage
= 5V
C
B
I
I
C
B
= 10
vs. Collector Current (DRDN005W)
= 10
I , COLLECTOR CURRENT (mA)
C
I , COLLECTOR CURRENT (mA)
C
Collector Current (DRDP006W)
vs. Collector Current (DRDN005W)
I , COLLECTOR CURRENT (mA)
C
1
10
10
T = -50°C
T = 25°C
T = 150°C
A
A
A
T = 150°C
A
T = 25°C
A
T = 150°C
10
A
T = 25°C
100
100
A
T = -50°C
T = -50°C
A
A
100
1,000
1,000
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10,000
1,000
1,000
1.4
1.6
1.2
1.0
0.8
0.6
0.4
0.2
100
100
0.001
0
Fig. 12, Typical Collector Saturation Region (DRDP006W)
10
10
1
1
1
1
I = 1mA
C
V
CE
Fig. 10, Typical Gain Bandwidth Product vs.
= 5V
0.01
Fig. 8, Typical DC Current Gain vs.
I , COLLECTOR CURRENT (mA)
C
Collector Current (DRDN005W)
I , COLLECTOR CURRENT (mA)
C
Collector Current (DRDN005W)
I = 10mA
I , BASE CURRENT (mA)
C
B
T = -50°C
A
10
0.1
I = 30mA
C
I = 100mA
C
1
T = 25°C
I = 300mA
C
A
100
T = 150°C
A
10
© Diodes Incorporated
DRD (xxxx) W
1,000
100
10