DDTC123JLP-7 Diodes Inc, DDTC123JLP-7 Datasheet - Page 2

• Manufacturer Part Number: DDTC123JLP-7
• Description: TRANS PNP PRE BIAS 3-DFN
• Manufacturer: Diodes Inc

Specifications of DDTC123JLP-7

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 180 @ 50mA, 5V
• Vce Saturation (max) @ Ib, Ic: 200mV @ 5mA, 50mA
• Frequency - Transition: 250MHz
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Package / Case: 3-DFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: DDTC123JLPDITR

Electrical Characteristics
Typical Characteristics Curves
Off Characteristics (Note 4)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage *
Emitter-Base Breakdown Voltage *
Collector Cutoff Current *
Base Cutoff Current (I
Collector-Base Cut Off Current
Collector-Emitter Cut Off Current, I
Emitter-Base Cut Off Current
Input-Off Voltage
On Characteristics (Note 4)
Base-Emitter Turn-On Voltage*
Base-Emitter Saturation Voltage*
Input-On Voltage
Input Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output On Voltage (Same as V
Input Resistor +/-30%
Resistor Ratio
Small Signal Characteristics
Transition Frequency (gain bandwidth product)
*Guaranteed by design
Notes:
DDTCxxxxLP (R1≠R2 Series)
Document number: DS30755 Rev. 7 - 2
300
250
200
150
100
4.
50
Characteristic
0
0
Short duration pulse test used to minimize self-heating effect.
Pulse Test: Pulse width, tp<300 uS, Duty Cycle, d<=0.02
Fig. 1 Power Dissipation vs. Ambient Temperature
R
25
θJA
BEX
T , AMBIENT TEMPERATURE ( C)
= 500 C/W
A
)
50
°
CE(SAT)
O(OFF)
75
(Note 3)
)
DDTC114YLP
DDTC114YLP
DDTC114YLP
DDTC143ZLP
DDTC143ZLP
DDTC143ZLP
DDTC123JLP
DDTC123JLP
DDTC123JLP
100
@T
A
P/N
= 25°C unless otherwise specified
125
@T
°
150 175
A
Δ (R2/R1)
V
V
V
Symbol
V
V
V
= 25°C unless otherwise specified
V
V
(BR)CBO
(BR)CEO
(BR)EBO
V
BE(SAT)
CE(SAT)
I
I
BE(ON)
ΔR1
I
I
I(OFF)
h
O(ON)
CEX
CBO
CEO
EBO
I
I(ON)
f
BL
I
FE
T
I
www.diodes.com
2 of 7
Min
125
150
180
-30
-20
4.5
1.1
50
50
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
50
70
⎯
⎯
⎯
⎯
Typ
250
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
0.998
Max
0.85
0.85
0.95
0.98
0.98
0.15
0.5
0.5
0.5
0.5
0.5
0.5
7.2
1.5
7.2
0.2
0.3
-20
30
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
DDTCxxxxLP (R1≠R2 Series)
Unit
MHz
mA
mA
μA
μA
μA
μA
⎯
⎯
⎯
⎯
⎯
%
%
V
V
V
V
V
V
V
V
V
I
I
I
V
V
V
V
V
V
V
I
V
V
V
V
V
V
V
I
I
I
⎯
⎯
V
C
C
E
C
C
C
J
CE
CE
CB
CE
EB
CE
CE
O
I
CE
CE
CE
CE
CE
CE
= 2.5mA, I
= 10μA, I
= 2mA, I
= 50μA, I
= 10mA, I
= 10mA, I
= 50mA, I
= 5V
= 0.3V, I
= 5V, I
= 50V, V
= 50V, V
= 50V, I
= 50V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 5V, I
= 10V, I
Test Condition
B
C
C
C
C
C
C
C
C
E
C
C
B
B
B
E
B
O
E
= 0
= 0
= 100μA
= 2mA
= 1mA
= 2mA
= 5mA
= 10mA
= 50mA
= 0
= 0
EB(OFF)
EB(OFF)
= 5mA
= 1mA, V
= 1mA
= 5mA
= 0
= 0
= 5mA, f = 100MHz
= 50mA
© Diodes Incorporated
= 3.0V
= 3.0V
CE
March 2009
=5V