UNR522600L Panasonic - SSG, UNR522600L Datasheet
UNR522600L
Manufacturer Part Number
UNR522600L
Description
TRANS NPN W/RES 100 HFE SMINI-3
Manufacturer
Panasonic - SSG
Datasheet
1.UNR522600L.pdf
(5 pages)
Specifications of UNR522600L
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
600mA
Voltage - Collector Emitter Breakdown (max)
20V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 50mA, 5V
Vce Saturation (max) @ Ib, Ic
80mV @ 2.5mA, 50mA
Frequency - Transition
200MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
S-Mini3-G1 (SC 70)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
UNR522600LTR
Transistors with built-in Resistor
UNR5225, UNR5226
Silicon NPN epitaxial planar type
For muting
■ Features
■ Resistance by Part Number
■ Absolute Maximum Ratings T
■ Electrical Characteristics T
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: August 2008
• Low collector-emitter saturation voltage V
• The use with high current value is possible
• UNR5225
• UNR5226
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Input resistance
ON resistance
Transition frequency
muting circuit
2. * : Refer to R
Parameter
Parameter
*
4.7 kΩ
10 kΩ
on
(R
measurement circuit
1
UNR5226
UNR5225
UNR5226
UNR5225
)
This product complies with the RoHS Directive (EU 2002/95/EC).
(R
a
Symbol
Symbol
V
2
= 25°C ± 3°C
V
V
V
V
V
V
I
I
)
T
CE(sat)
R
h
CBO
P
EBO
R
CBO
I
T
CBO
f
CEO
EBO
CEO
EBO
a
stg
FE
C
T
on
T
j
1
= 25°C
CE(sat)
−55 to +150
Rating
I
I
I
V
V
V
I
V
V
600
150
150
C
C
E
C
, optimum for the
30
20
CB
EB
CE
I
CB
5
= 1 µA, I
= 1 µA, I
= 1 mA, I
= 50 mA, I
= 7 V, R
SJH00043CED
= 5 V, I
= 5 V, I
= 10 V, I
= 30 V, I
L
E
C
B
Conditions
C
C
Unit
mW
mA
E
= 1 kΩ, f = 1 kHz
°C
°C
= 0
= 0
B
E
V
V
V
= 0
= 0
= 50 mA
= −50 mA, f = 200 MHz
= 0
= 2.5 mA
■ Package
■ Marking Symbol
■ Internal Connection
• Code
• Pin Name
SMini3-G1
1: Base
2: Emitter
3: Collector
UNR5225: FZ
UNR5226: FY
B
−30%
Min
100
30
20
5
R
R
1
2
0.95
Typ
200
4.7
1.5
10
+30%
Max
600
80
C
E
1
1
MHz
Unit
mV
µA
µA
kΩ
V
V
V
Ω
1
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