UNR921MJ0L Panasonic - SSG, UNR921MJ0L Datasheet - Page 2

• Manufacturer Part Number: UNR921MJ0L
• Description: TRANS NPN W/RES 80 HFE SSMINI 3P
• Manufacturer: Panasonic - SSG

Specifications of UNR921MJ0L

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 150MHz
• Power - Max: 125mW
• Mounting Type: Surface Mount
• Package / Case: SS Mini3-F1 (SC 89)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: UN921MJ-(TX); UN921MJTR; UNR921MJ0LTR; UNR921MJTR; UNR921MJTR

UNR921xJ Series
■ Electrical Characteristics T
2
Emitter-
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cut-off current (Emitter open)
Collector-emitter cut-off current (Base open)
base
cut-off
current
(Collector 921EJ/921MJ/921NJ/921TJ
open)
Forward
current
transfer
ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
Input
resistance UNR9219J
UNR9210J/9215J/
9216J/9217J/921BJ
UNR9213J/921AJ
UNR9212J/9214J/921DJ/
UNR9211J
UNR921FJ/921KJ
UNR9219J
UNR9218J/921CJ/921LJ/921VJ
UNR921VJ
UNR9218J/921KJ/921LJ
UNR9219J/921DJ/921FJ
UNR9211J
UNR9212J/921EJ
UNR9213J/9214J/921AJ/
921CJ/921MJ
UNR921NJ/921TJ
UNR9210J/9215J/9216J/
9217J/921BJ
UNR9213J/921BJ/921KJ
UNR921DJ
UNR921EJ
UNR921AJ
UNR9218J
UNR921MJ/921VJ
UNR9216J/921FJ/921LJ/921NJ
UNR9211J/9214J/9215J/921KJ
UNR9212J/9217J/921TJ
UNR9210J/9213J/921DJ/921EJ
UNR921AJ/921BJ
Parameter
a
Symbol
V
= 25°C ± 3°C
V
V
I
I
I
V
V
CE(sat)
h
CBO
CEO
EBO
R
f
CBO
CEO
FE
OH
OL
T
1
I
I
V
V
V
V
I
V
V
V
V
V
V
V
C
C
C
CB
CE
EB
CE
CC
CC
CC
CC
CC
CC
CB
= 10 µA, I
= 2 mA, I
= 10 mA, I
SJH00039BED
= 50 V, I
= 50 V, I
= 6 V, I
= 10 V, I
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= 5 V, V
= 10 V, I
B
Conditions
C
E
B
B
B
B
B
B
B
B
C
E
E
= 0
= 0
= 0
= 0.5 V, R
= 2.5 V, R
= 3.5 V, R
= 10 V, R
= 6 V, R
= 5 V, R
= 0
= 0
= 5 mA
= 0.3 mA
= −2 mA, f = 200 MHz
L
L
Transistors with built-in Resistor
L
= 1 kΩ
= 1 kΩ
L
L
L
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
−30%
Min
160
4.9
50
50
20
30
35
60
80
80
6
0.51
Typ
150
100
2.2
4.7
10
22
47
1
+30%
Max
0.01
0.25
400
460
0.1
0.5
0.1
0.2
0.5
1.0
1.5
2.0
0.2
20
MHz
Unit
mA
µA
µA
kΩ

V
V
V
V
V