UNR921NJ0L Panasonic - SSG, UNR921NJ0L Datasheet - Page 3
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UNR921NJ0L
Manufacturer Part Number
UNR921NJ0L
Description
TRANS NPN 50V 100MA W/RES SSMINI
Manufacturer
Panasonic - SSG
Specifications of UNR921NJ0L
Transistor Type
NPN - Pre-Biased
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 10V
Vce Saturation (max) @ Ib, Ic
250mV @ 300µA, 10mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
150MHz
Power - Max
125mW
Mounting Type
Surface Mount
Package / Case
SS Mini3-F1 (SC 89)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
UNR921NJ0LTR
UNR921NJTR
UNR921NJTR
UNR921NJTR
UNR921NJTR
Transistors with built-in Resistor
■ Electrical Characteristics (continued) T
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Emitter-base resistance UNR921CJ
Rasistance UNR921MJ
ratio
Common characteristics chart
Characteristics charts of UNR9210J
150
125
100
75
50
25
60
50
40
30
20
10
0
0
0
0
Collector-emitter voltage V
Ambient temperature T
2
UNR921NJ
UNR9218J/9219J
UNR9214J
UNR921TJ
UNR921FJ
UNR921AJ/921VJ
UNR9211J/9212J/9213J/921LJ
UNR921KJ
UNR921EJ
UNR921DJ
Parameter
I
40
B
= 1.0 mA
0.3 mA
4
I
P
C
0.9 mA
T
V
0.8 mA
T
80
6
0.7 mA
CE
0.6 mA
a
8
0.5 mA
120
T
0.4 mA
a
a
= 25°C
CE
( °C )
10
0.1 mA
( V )
160
12
Symbol
R
R
1
/R
2
2
10
10
10
10
−1
−2
10
1
2
−1
a
−25°C
Collector current I
SJH00039BED
= 25°C ± 3°C
V
CE(sat)
1
25°C
Conditions
I
10
C
T
C
a
I
( mA )
C
= 75°C
/ I
B
= 10
10
2
400
300
200
100
−30%
0
0.08
0.17
0.37
1.70
1.70
Min
1
0.8
3.7
UNR921xJ Series
Collector current I
0.047
0.10
0.21
0.47
0.47
2.13
2.14
Typ
0.1
1.0
1.0
4.7
47
10
h
FE
I
+30%
Max
0.12
0.25
0.57
2.60
2.60
1.2
5.7
T
10
C
a
2
= 75°C
C
25°C
−25°C
V
( mA )
CE
= 10 V
Unit
kΩ
10
3
3