UNR911HG0L Panasonic - SSG, UNR911HG0L Datasheet - Page 2

• Manufacturer Part Number: UNR911HG0L
• Description: TRANS PNP W/RES 30HFE SSMINI
• Manufacturer: Panasonic - SSG

Specifications of UNR911HG0L

• Transistor Type: PNP - Pre-Biased
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 10K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 80MHz
• Power - Max: 125mW
• Mounting Type: Surface Mount
• Package / Case: SS Mini 3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UNR911HG0LTR

UNR911xG Series
■ Electrical Characteristics T
2
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Collector-base cutoff current (Emitter open)
Emitter-base UNR9110G/9115G/
cutoff current 9116G/9117G/911BG
(Collector
open)
Forward
current
transfer
ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Transition frequency
Input
resistance UNR9119G
UNR9118G
UNR9113G/911AG
UNR9112G/9114G/911DG/
911EG/911MG/911NG/911TG
UNR9111G
UNR911FG/911HG
UNR9119G
UNR9118G/911CG/911LG/911VG
UNR911VG
UNR9118G/911LG
UNR9119G/911DG/911FG/911HG
UNR9111G
UNR9112G/911EG
UNR9113G/9114G/
911AG/911CG/911MG
UNR911NG/911TG
UNR9110G/9115G/
9116G/9117G/911BG
UNR911VG
UNR9113G/911BG
UNR911DG
UNR911EG
UNR911AG
UNR9113G
UNR911AG
UNR911CG
UNR911HG/911MG/911VG
UNR9116G/911FG/911LG/911NG
UNR9111G/9114G/9115G
UNR9112G/9117G/911TG
UNR9110G/9113G/911DG/911EG
UNR911AG/911BG
Parameter
This product complies with the RoHS Directive (EU 2002/95/EC).
a
Symbol
V
= 25°C ± 3°C
V
V
I
I
I
V
V
h
CE(sat)
CBO
CEO
EBO
R
CBO
f
CEO
FE
OH
OL
T
1
I
I
V
V
V
V
I
I
V
V
V
V
V
V
V
V
V
V
C
C
C
C
CB
CE
EB
CE
CC
CC
CC
CC
CC
CC
CB
CB
CB
CB
= −10 µA, I
= −2 mA, I
= −10 mA, I
= −10 mA, I
SJH00222AED
= −5 V, V
= −5 V, V
= −5 V, V
= −5 V, V
= −5 V, V
= −10 V, I
= −10 V, I
= −10 V, I
= −10 V, I
= −50 V, I
= −6 V, I
= −10 V, I
= −50 V, I
= −5 V, V
Conditions
B
B
B
B
B
B
C
E
E
E
E
E
B
C
B
B
E
B
= 0
= − 0.5 V, R
= −2.5 V, R
= −3.5 V, R
= −10 V, R
= −5 V, R
= 0
= 1 mA, f = 200 MHz
= 2 mA, f = 200 MHz
= 2 mA, f = 200 MHz
= 1 mA, f = 200 MHz
= 0
= − 0.3 mA
= −1.5 mA
= −6 V, R
= 0
= 0
= −5 mA
L
L
= 1 kΩ
L
L
L
L
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
= 1 kΩ
−30%
−4.9
Min
−50
−50
160
20
30
35
60
80
80
6
0.51
Typ
150
150
100
1.0
2.2
4.7
80
80
10
22
47
− 0.01
− 0.25
+30%
− 0.1
− 0.5
− 0.1
− 0.2
− 0.5
− 0.2
Max
−1.0
−1.5
−2.0
400
460
20
MHz
Unit
mA
µA
µA
kΩ

V
V
V
V
V