UNR32AT00L Panasonic - SSG, UNR32AT00L Datasheet - Page 2

• Manufacturer Part Number: UNR32AT00L
• Description: TRANS NPN W/RES 80 HFE SSS MINI
• Manufacturer: Panasonic - SSG

Specifications of UNR32AT00L

• Transistor Type: NPN - Pre-Biased
• Current - Collector (ic) (max): 80mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 22K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 10V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 300µA, 10mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 150MHz
• Power - Max: 100mW
• Mounting Type: Surface Mount
• Package / Case: SSS Mini3-F1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: UNR32AT00LTR

UNR32AT
2
10
120
300
200
100
80
40
10
−1
0
1
10
0
10
0
−1
−4
V
V
T
Ambient temperature T
CE
a
O
= 25°C
= 0.2 V
= 10 V
Collector current I
Output current I
10
UNR32AT_V
UNR32AT_h
UNR32AT_P
40
−3
1
V
h
h
h  I
P
FE
FE
IN
T
10
 T
 T

 I

 I
 I

−2
T
80
T
T
a
−25°C
= 85°C
a
a
a
a
C
O
FE
T
IN
O
10
-T
-I
-I
C
(mA)
10
a
O
C
a
This product complies with the RoHS Directive (EU 2002/95/EC).
( A )
−1
25°C
( °C )
120
10
1
2
10
10
80
60
40
20
−1
0
1
0
0
Collector-emitter voltage V
Collector-base voltage V
T
a
= 25°C
SJH00109BED
UNR32AT_C
10
UNR32AT_I
4
C
I
I
C
ob
 V
 V

 V
 V

20
I
B
= 350 µA
CE
CE
CE
C
ob
CB
-V
-V
8
f = 1 MHz
T
CE
CB
30
a
= 25°C
CB
CE
300 µA
250 µA
200 µA
150 µA
100 µA
( V )
( V )
40
12
10
10
10
10
10
−1
−2
−1
1
10
1
2
0
−1
V
T
a
O
Collector current I
= 25°C
= 5 V
Input voltage V
UNR32AT_V
UNR32AT_I
T
a
V
V
2
1
= 85°C
I
CE(sat)
O
 V
 V

 I
 I

CE(sat)
IN
O
-V
IN
10
4
C
C
25°C
IN
I
( mA )
( V )
-I
C
−25°C
/ I
C
B
= 10
10
6
2