BC 807-40 E6327 Infineon Technologies, BC 807-40 E6327 Datasheet - Page 5

• Manufacturer Part Number: BC 807-40 E6327
• Description: TRANSISTOR PNP AF 45V SOT-23
• Manufacturer: Infineon Technologies

Specifications of BC 807-40 E6327

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 700mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100mA, 1V
• Power - Max: 330mW
• Frequency - Transition: 200MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 250 at 100 mA at 1 V
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.5 A
• Power Dissipation: 330 mW
• Maximum Operating Frequency: 200 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC 807-40 E6327; BC807-40E6327INTR; BC80740E6327XT; SP000010473

DC current gain h
V
h
DC current gain h
V
h
FE
FE
CE
CE
-grp. 16
-grp. 40
10
10
10
10
10
10
= 1 V
= 1 V
3
2
1
3
2
1
10
10
-5
-5
105 °C
85 °C
65 °C
25 °C
-40 °C
105 °C
85 °C
65 °C
25 °C
-40 °C
10
10
-4
-4
FE
FE
10
10
=
=
-3
-3
(I
(I
C
C
10
10
)
)
-2
-2
10
10
-1
-1
I
I
C
C
A
A
10
10
0
0
5
DC current gain h
V
h
Collector-emitter saturation voltage
I
C
C
FE
CE
= (V
10
mA
10
10
10
10
-grp. 25
5
5
5
10
10
10
= 1 V
-1
3
2
1
0
3
2
1
0
10
CEsat
-5
105 °C
85 °C
65 °C
25 °C
-40 °C
), h
10
0.2
-4
FE
150 ˚C
-50
FE
25
= 10
10
˚C
˚C
=
BC807.../BC808...
-3
0.4
(I
C
10
)
-2
2007-06-08
0.6
10
EHP00215
-1
V
I
V
C
CEsat
A
0.8
10
0